文献类型：期刊文献

英文题名：A Study of Electron Beam Induced Deposition and Nano Device Fabrication Using Liquid Cell TEM Technology

作者：Chen, Xin[1,2,3,4];Zhou, Lihui[5];Wang, Ping[6];Cao, Hongliang[1,2];Miao, Xiaoli[1,2];Wei, Feifei[1,2]

机构：[1]E China Univ Sci & Technol, Key Lab Ultrafine Mat, Minist Educ, Shanghai 200237, Peoples R China;[2]E China Univ Sci & Technol, Shanghai Key Lab Adv Polymer Mat, Sch Mat Sci & Engn, Shanghai 200237, Peoples R China;[3]Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA;[4]Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China;[5]E China Univ Sci & Technol, Shanghai 200237, Peoples R China;[6]E China Univ Sci & Technol, State Key Lab Bioreactor Engn, Biomed Nanotechnol Ctr, Shanghai 200237, Peoples R China

年份：2014

卷号：32

期号：5

起止页码：399

外文期刊名：CHINESE JOURNAL OF CHEMISTRY

收录：;WOS:【SCI-EXPANDED(收录号:WOS:000337524600005)】；

基金：The experiments have been carried out in part in the Frederick Seitz Materials Research Laboratory Central Facilities, University of Illinois, which are partially supported by the U.S. Department of Energy under grants DE-FG02-07ER46453 and DE-FG02-07ER46471. The authors thank S. J. Dillon, Y. Liu, J. Mabon, K.-W. Noh, A. Shah, T. Shang, J. G. Wen, J. M. Zuo for the kind help. The project was supported by Shanghai Leading Academic Discipline Project (B502), Shanghai Key Laboratory Project (08DZ2230500), Fundamental Research Fund of ECUST, Science and Technology Commission of Shanghai Municipality Project (11nm0507000), and the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry.

语种：英文

外文关键词：electron beam induced deposition; in situ TEM; nanolithography; nanodevices

摘要：SiCx nano dots and nano wires with sizes from 60 nm to approximately 2 mu m were fabricated using liquid cell transmission electron microscope (TEM) technology. A SiCl4 in CH2Cl2 solution was sealed between two pieces of Si3N4 window grids in an in situ TEM liquid cell. Focused 200 keV electron beams were used to bombard the sealed precursors, which caused decomposition of the precursor materials, and deposition of the nano materials on the Si3N4 window substrates. The size of nano dots increased with beam exposure time, following an approximately exponential relationship with the beam doses. Secondary electrons are attributed as the primary sources for the Si and C reduction. A nano device was formed from a deposited nano wire, with its electrical property characterized.