文献类型：期刊文献

英文题名：The impact of silicon surface pretreatment on interface structure and passivation quality of AlOx films deposited by atomic layer deposition

作者：Xu, Jiahui[1];Zhang, Wenjing[1];Li, Yuxuan[2];Liu, Cui[2];Zhang, Geng[3];Shen, Zhenjue[1];Verlinden, Pierre[1,4];Yuan, Xiao[1]

机构：[1]Yangtze Inst Solar Technol, Jiangyin 214400, Jiangsu, Peoples R China;[2]East China Univ Sci & Technol, Sch Mat Sci & Engn, Shanghai 200237, Peoples R China;[3]Jolywood ShanXi Solar Technol Co Ltd, Taiyuan 030000, Shanxi, Peoples R China;[4]Trina Solar State Key Lab PV Sci & Technol, Changzhou 213031, Jiangsu, Peoples R China

年份：2025

卷号：289

外文期刊名：SOLAR ENERGY MATERIALS AND SOLAR CELLS

收录：;EI(收录号：20251618272767);WOS:【SCI-EXPANDED(收录号:WOS:001477469400001)】；

基金：This work was supported by the Yangtze Institute for Solar Technology (Y20240202-RD). We thank Jolywood Solar Technology Co., Ltd for the help of the TOPCon solar cell process.

语种：英文

外文关键词：ALD AlO x; Pretreatment; Surface passivation; Interface structure

摘要：The initial state of silicon surface prior to aluminum oxide (AlOx) films by atomic layer deposition (ALD) plays a critical role in determining the passivation performance. However, the mechanisms by which the silicon surface state impacts the formation of structures that passivate dangling bonds and generate negative charge centers remain inadequately understood. In this study, various oxidative pretreatments were employed to modify the surface characteristics, followed by the deposition and annealing of AlOx films. The findings reveal that different oxidative pretreatments affect the formation of Si-O-Al and octahedral AlO6 structures at ALD AlOx/Si interface, which ultimately determine the passivation performance of ALD AlOx films. Silicon surfaces with minimal or no oxidation are found to be more favorable for the formation of interfacial Si-O-Al structures, resulting in a lower interface defect density of approximately 1 x 1011 eV- 1cm- 2. Additionally, silicon surfaces dominated by lowvalence oxidation states promote the formation of octahedral AlO6 structures, which enhance the negative fixed charge density. Incorporating the air pretreatment prior to ALD AlOx films further reduces the J0 of TOPCon solar cells, resulting in an average open-circuit voltage gain of 3 mV.