文献类型：期刊文献

英文题名：Nonvolatile Rewritable Memory Effects in Graphene Oxide Functionalized by Conjugated Polymer Containing Fluorene and Carbazole Units

作者：Zhang, Bin[1];Liu, Yi-Liang[2];Chen, Yu[1];Neoh, Koon-Gee[2];Li, Yong-Xi[1];Zhu, Chun-Xiang[3];Tok, Eng-Soon[4];Kang, En-Tang[2]

机构：[1]E China Univ Sci & Technol, Key Lab Adv Mat, Inst Appl Chem, Shanghai 200237, Peoples R China;[2]Natl Univ Singapore, Dept Chem & Biomol Engn, Singapore 119260, Singapore;[3]Natl Univ Singapore, Dept Elect & Comp Engn, SNDL, Singapore 119260, Singapore;[4]Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore

年份：2011

卷号：17

期号：37

起止页码：10304

外文期刊名：CHEMISTRY-A EUROPEAN JOURNAL

收录：;EI(收录号：20113614297851);WOS:【SCI-EXPANDED(收录号:WOS:000295457700015)】；

基金：The authors are grateful for the financial support of the National Natural Science Foundation of China (21074034), the Ministry of Education of China (309013), the Fundamental Research Funds for the Central Universities, the Shanghai Municipal Educational Commission for the Shuguang fellowship (08GG10) and the Shanghai Eastern Scholarship.

语种：英文

外文关键词：graphene oxide; molecular devices; polyfluorene; polymers; rewritable memory

摘要：A new polymer, poly[{9,9-di(triphenylamine)fluorene}(9,9-dihexylfluorene)(4-aminophenylcarbazole)] (PFCz) was synthesized and used in a reaction with graphene oxide (GO) containing surface-bonded acyl chloride moieties to give a soluble GO-based polymer material GO-PFCz. A bistable electrical switching effect was observed in an electronic device in which the GO-PFCz film was sandwiched between indium-tin oxide (ITO) and Al electrodes. This device exhibited two accessible conductivity states, that is, a low-conductivity (OFF) state and a high-conductivity (ON) state, and can be switched to the ON state under a negative electrical sweep; it can also be reset to the initial OFF state by a reverse (positive) electrical sweep. The ON state is nonvolatile and can withstand a constant voltage stress of -1 V for 3 h and 10(8) read cycles at -1 V under ambient conditions. The nonvolatile nature of the ON state and the ability to write, read, and erase the electrical states, fulfill the functionality of a rewritable memory. The mechanism associated with the memory effects was elucidated from molecular simulation results and in-situ photoluminescence spectra of the GO-PFCz film under different electrical biases.