详细信息
Growing poly(N-vinylcarbazole) from the surface of graphene oxide via RAFT polymerization ( EI收录)
文献类型:期刊文献
英文题名:Growing poly(N-vinylcarbazole) from the surface of graphene oxide via RAFT polymerization
作者:Zhang, Bin[1]; Chen, Yu[1]; Xu, Liqun[2]; Zeng, Longjia[1]; He, Ying[3]; Kang, En-Tang[2]; Zhang, Jinjuan[1]
机构:[1] Key Lab for Advanced Materials, Institute of Applied Chemistry, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237, China; [2] Department of Chemical and Biomolecular Engineering, National University of Singapore, 10 Kent Ridge, Singapore 119260, Singapore; [3] Material Research and Analysis Center, School of Materials Science and Engineering, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237, China
年份:2011
卷号:49
期号:9
起止页码:2043
外文期刊名:Journal of Polymer Science, Part A: Polymer Chemistry
收录:EI(收录号:20111313876702)
语种:英文
外文关键词:Nonvolatile storage - Free radical polymerization - Living polymerization - Grafting (chemical) - Chains
摘要:A new approach on usage of S-1-dodecyl-Sa€2-(α, αa€2-dimethyl-αa€3-acetic acid) trithiocarbonate (DDAT)-covalently functionalized graphene oxide (GO) as reversible addition fragmentation chain transfer (RAFT) agent for growing of poly(N-vinylcarbazole) (PVK) directly from the surface of GO was described. The PVK polymer covalently grafted onto GO has Mn of 8.05 ? - 103, and a polydispersity of 1.43. The resulting material PVK-GO shows a good solubility in organic solvents when compared to GO, and a significant energy bandgap of a?/2.49 eV. Bistable electrical switching and nonvolatile rewritable memory effect, with a turn-on voltage of about -1.7 V and an ON/OFF state current ratio in excess of 103, are demonstrated in the Al/PVK-GO/ITO structure. ? 2011 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2011 A new "grafting from" method to grow poly(N-vinylcarbazole) from the surface of graphene oxide via RAFT polymerization is described. This material was successfully used to fabricate a nonvolatile memory device, which exhibited a typical bistable electrical switching and rewritable memory effect. Copyright ? 2011 Wiley Periodicals, Inc.
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