文献类型：期刊文献

英文题名：Residual stresses within oxide layers due to lateral growth strain and creep strain: Analytical modeling

作者：Maharjan, S.[1];Zhang, X. C.[1];Xuan, F. Z.[1];Wang, Z. D.[1];Tu, S. T.[1]

机构：[1]E China Univ Sci & Technol, Key Lab Pressurized Syst & Safety, MOE, Shanghai 200237, Peoples R China

年份：2011

卷号：110

期号：6

外文期刊名：JOURNAL OF APPLIED PHYSICS

收录：;EI(收录号：20114114412983);WOS:【SCI-EXPANDED(收录号:WOS:000295619300031)】；

基金：The authors are grateful for the support by National Natural Science Foundations of China (50835003, 50805047, 10972078) and National High-tech R&D Program of China (863 Program, 2009AA04Z421). The author X.C. Zhang is also grateful for the support by Ph.D. Programs Foundation of Ministry of Education of China (20090101120021).

语种：英文

外文关键词：Analytical models - Residual stresses - Grain boundaries - Oxidation - Creep - Grain growth

摘要：Deflection test has been widely used to estimate residual stresses within an oxide layer during isothermal oxidation of one surface of an alloy or metal. Deflection models so far developed have considered elastic, plastic, and creep model to predict stresses produced from curvature of the metal/oxide interface. However, none of the models have considered growth stress. During oxidation, when new oxide forms along grain boundaries lying perpendicular to the interface, it will generate a lateral growth strain. When this strain is constrained by the underlying metal, it will generate growth stress in the oxide. This lateral growth strain combined with creep strain of the both oxide and metal will then provide the realistic approach to deal with stresses in oxide/metal composite. Considering these situations an analytical model has been developed to determine residual stresses for the metal/oxide composite of the deflection test. The stress value in both metal and oxide is calculated for notional mechanical properties. Moreover, the effects of oxide thickness, oxidation time, lateral growth constant, and the creep constants on stresses are discussed. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3626052]