详细信息
Highly Efficient Zn-Cu-In-Se Quantum Dot-Sensitized Solar Cells through Surface Capping with Ascorbic Acid ( SCI-EXPANDED收录 EI收录)
文献类型:期刊文献
英文题名:Highly Efficient Zn-Cu-In-Se Quantum Dot-Sensitized Solar Cells through Surface Capping with Ascorbic Acid
作者:Zhang, Hua[1];Fang, Wenjuan[1];Wang, Wenran[1];Qian, Nisheng[1];Ji, Xiaohe[1]
机构:[1]East China Univ Sci & Technol, Sch Chem & Mol Engn, Shanghai Key Lab Funct Mat Chem, Shanghai 200237, Peoples R China
年份:2019
卷号:11
期号:7
起止页码:6927
外文期刊名:ACS APPLIED MATERIALS & INTERFACES
收录:;EI(收录号:20190906561733);WOS:【SCI-EXPANDED(收录号:WOS:000459642200025)】;
基金:This work was financially supported by the Science and Technology Commission of Shanghai Municipality (No. 18ZR1409200).
语种:英文
外文关键词:ascorbic acid; capping ligand; quaternary semiconductor; high efficiency; quantum dot-sensitized solar cells
摘要:The balance between band structure, composition, and defect is essential for improving the optoelectronic properties of ternary and quaternary quantum dots and the corresponding photovoltaic performance. In this work, ascorbic acid (AA) as capping ligand is introduced into the reaction system to prepare green Zn-Cu-In-Se (ZCISe) quantum dots. Results show that the addition of AA can increase the Zn content while decrease the In content, resulting in enlarged band gap, high conduction band energy level, and suppressed charge recombination. When AA/Cu ratio is 1, the quantum dots possess the largest band gap of 1.49 eV and the assembled quantum dot-sensitized solar cells exhibit superior photovoltaic performance with similar to 17% increment mainly contributed by the dramatically increased current density. The new record efficiencies of 10.44 and 13.85% are obtained from the ZCISe cells assembled with brass and titanium mesh-based counter electrodes, respectively.
参考文献:
正在载入数据...
