文献类型：专利

英文题名：Growing method of graphene film on insulating substrate used for electrical or electrochemical device comprises preparing oxidized aqueous graphene solution containing weak acid, adding insulating substrate, hydrothermal reacting and drying

作者：ZHAO C;WANG S;SHAO X;MA Y;ZHAO L;QIAN X

机构：[1]UNIV EAST CHINA SCI & TECHNOLOGY

申请号：CN106082178-A

申请日：2016-06-01

公开日：2016-11-09

语种：英文

收录：DERWENT

摘要：NOVELTY - Growing method of graphene film on insulating substrate comprises preparing oxidized aqueous graphene solution containing weak acid; adding insulating substrate and hydrothermal reacting 90-220 degrees C for 18-30 hours; and taking out substrate, cleaning, and drying. USE - Method for growing graphene film on insulating substrate (claimed) used for electrical or electrochemical device. ADVANTAGE - The method does not need expensive instrument equipment and has simple process, easy control, and low cost.