文献类型：期刊文献

英文题名：Influence of Preferred Orientation on the Electrical Conductivity of Fluorine-Doped Tin Oxide Films

作者：Wang, Jian Tao[1,2];Shi, Xiang Lei[1,2];Liu, Wei Wei[1,2];Zhong, Xin Hua[1,2];Wang, Jian Nong[1,2];Pyrah, Leo;Sanderson, Kevin D.;Ramsey, Philip M.;Hirata, Masahiro[3];Tsuri, Keiko[3]

机构：[1]E China Univ Sci & Technol, Sch Mech & Power Engn, Nanomat X Res Ctr, Shanghai 200237, Peoples R China;[2]E China Univ Sci & Technol, Sch Chem & Mol Engn, Shanghai 200237, Peoples R China;[3]Nippon Sheet Glass Co Ltd, R&D, Itami, Hyogo 6648520, Japan

年份：2014

卷号：4

外文期刊名：SCIENTIFIC REPORTS

收录：;WOS:【SCI-EXPANDED(收录号:WOS:000329846100008)】；PubMed(收录号：24419455);

基金：Financial supports from Pilkington Technology Management Limited, National Natural Science Foundation of China (project #: 51271077 and U1362104) and Shanghai Nanoscience and Nanotechnology Promotion Center (project #: 12 nm 0503300) are greatly acknowledged. Contributions by Drs. T. Manning and Fujisawa Akira during the early stage of this work are greatly thanked.

语种：英文

摘要：Current development of high-performance transparent conductive oxide (TCO) films is limited with tradeoff between carrier mobility and concentration since none of them can be improved without sacrificing the other. In this study, we prepare fluorine doped tin oxide (FTO) films by chemical vapor deposition with inclusions of different additives and report that the mobility can be varied from 0.65 to 28.5 cm(2) V-1 s(-1) without reducing the achieved high carrier concentration of 4 x 3 10(20) cm(-3). Such an increase in mobility is shown to be clearly associated with the development of (200) preferred orientation (PO) but concurrent degradation of (110) PO in films. Thus, at a constant high carrier concentration, the electrical conductivity can be improved via carrier mobility simply by PO control. Such a one-step approach avoiding conventional post-deposition treatment is suggested for developing next-generation FTO as well as other TCO films with better than ever conductivities.