文献类型：期刊文献

英文题名：Glass-based encapsulant enabling SiC power devices to long-term operate at 300 °C

作者：Chen, Junwei[1];Luo, Tao[2];Huang, Houbin[3];Zhang, Liangzhu[1];Chen, Wei[2];Qin, Guobing[3];Fan, Jiajie[2];Zeng, Huidan[1]

机构：[1]East China Univ Sci & Technol, Sch Mat Sci & Engn, Shanghai 200237, Peoples R China;[2]Fudan Univ, Inst Future Lighting, Acad Engn & Technol, Shanghai Engn Technol Res Ctr SIC Power Device, Shanghai 200433, Peoples R China;[3]Beijing Beixu Elect Mat Co LTD, Beijing 100016, Peoples R China

年份：2025

卷号：680

外文期刊名：APPLIED SURFACE SCIENCE

收录：;EI(收录号：20244117178715);WOS:【SCI-EXPANDED(收录号:WOS:001334915100001)】；

基金：This work was supported by the National Natural Science Foundation of China (NSFC 52272001) and State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology (AWJ-23Z03) . We sincerely appreciate the support of shear strength test from BONOTEC Co., TC test from Good-Ark Co. and a part of SiC devices from Yangzhou Yangjie Electronic Technology Co.,Ltd.

语种：英文

外文关键词：Glass-based encapsulant; SiC device; High-temperature stability; Finite element analysis; Thermal management

摘要：The high-temperature applications of Silicon Carbide (SiC) power devices are constrained by traditional epoxy molding compound (EMC). A significant challenge arises from the mismatch between the thermal expansion coefficients (CTE) of the encapsulant and the SiC chip, generating thermal and mechanical stresses during prolonged high-temperature operation. While glass encapsulants offer stability above 300 degrees C, these stresses can lead to mechanical degradation and eventual failure of SiC power devices. We design a glass-based encapsulation material to adjust the CTE of the glass to match that of the SiC chip (3-9 ppm/degrees C), enabling encapsulation of the device for long-term operation at 300 degrees C. Finite element analysis (FEA) confirms that the CTE adjustment effectively reducs internal thermal stresses. The glass composite with 10 wt% PbTiO3 3 demonstrates a Tg g of 310 degrees C and a CTE of 8.48 ppm/degrees C, successfully encapsulating a SiC schottky barrier diode in TO-247 package form. The encapsulated device exhibits low leakage current, a reverse breakdown voltage of 1,700 V, and a thermal resistance of 0.45 degrees C/W. Notably, the device maintains excellent performance even after 1,176 h of high- temperature aging, including 336 h at 300 degrees C and exhibits minimal change during thermal cycling between-50 and 150 degrees C for 100 cycles. Long-term performance analysis demonstrates superior stability compared to EMC encapsulation. These results highlight the potential of glass-based encapsulants for wide band gap power devices, offering reliability and performance under extreme conditions.