文献类型：期刊文献

英文题名：High-efficiency black silicon tunnel oxide passivating contact solar cells through modifying the nano-texture on micron-pyramid surface

作者：Xu, Jiahui[1,2];Chen, Cheng[2];Liu, Cui[1];Chen, Jia[2];Liu, Zhifeng[2];Yuan, Xiao[1];Li, Hongbo[1]

机构：[1]East China Univ Sci & Technol, Sch Mat Sci & Engn, Shanghai 200237, Peoples R China;[2]Jolywood Taizhou Solar Technol Co Ltd, Taizhou 225500, Jiangsu, Peoples R China

年份：2021

卷号：233

外文期刊名：SOLAR ENERGY MATERIALS AND SOLAR CELLS

收录：;EI(收录号：20213910955108);WOS:【SCI-EXPANDED(收录号:WOS:000703163600005)】；

基金：This work was supported by the National Key R&D Program of China (2018YFB1500300). We thank Changzhou Belight technology Co., Ltd for the help of the reactive ion etching process.

语种：英文

外文关键词：Optical loss; Nanopore/micron-pyramid; TOPCon; Surface modification

摘要：Optical loss is a significant factor restricting the conversion efficiency of conventional bifacial tunnel oxide passivating contact (TOPCon) solar cells. Black silicon structure is commonly used to enhance the photo generated current density (J(ph)) of crystalline solar cells due to its excellent light-trapping capability. However, the photogenerated current gain is cancelled by the increased emitter recombination current originated from the black silicon structure with a high enhanced surface area ratio. In this work, we used a buffered oxide etching solution to modify the surface morphology of nanopore/micron-pyramid composite (NPP) structure silicon. Further, we studied the effects of NPP structures with different enhanced surface area ratio on front-side reflection, boron atom doping, emitter passivation, and cell performance. By identifying the appropriate surface modification processing, we fabricated the large-scale (158.75 mm x 158.75 mm) bifacial TOPCon solar cells using industrial equipment and processes with an average short-circuit current density of 41.12 mA/cm(2) and average conversion efficiency of 23.08%. Through adequately widening nanostructure size and depositing high-quality Al2O3/SiNx stacked passivation films on NPP structure surface, we achieved lower carrier recombination while maintaining high J(ph).