详细信息
Radiation losses in ohmically heated plasma in the HT-7 tokamak ( EI收录)
文献类型:期刊文献
中文题名:Radiation Losses in Ohmically Heated Plasma in the HT-7 Tokamak
英文题名:Radiation losses in ohmically heated plasma in the HT-7 tokamak
作者:Zhang, Xianmei[1,2]; Wan, Baonian[2]; Feng, Xiaojuan[1]
机构:[1] Department of Physics, East China University of Science and Technology, 200237 Shanghai, China; [2] Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031, China
年份:2004
卷号:6
期号:2
起止页码:2194
中文期刊名:Plasma Science and Technology
外文期刊名:Plasma Science and Technology
收录:EI(收录号:20063110039489);Scopus;CSCD:【CSCD2011_2012】;
基金:The project supported by the Meg-Science Engineering Project of the Chinese Academy of Sciences
语种:英文
中文关键词:impurities in plasma;radiationloss;tokamak
外文关键词:Boron - Carrier concentration - Electric discharges - Impurities - Plasmas - Silicon - Tokamak devices
摘要:Total radiation losses in ohmically heated plasma have been investigated in the HT-7 tokamak after different wall conditionings. Discharges after siliconization and boronization have been studied by using bolomitric measurements. Not only low-Z impurities but also high-Z impurities are reduced obviously after wall conditioning. The fraction of the total radiation loss to the ohmic input increases with increasing line-averaged central electron density. But it decreases with increasing the plasma current IP after wall conditionings. It is slightly lower for a boronized wall than that for a siliconized wall.
Total radiation losses in ohmically heated plasma have been investigated in the HT-7 tokamak after different wall conditionings. Discharges after siliconization and boronization have been studied by using bolomitric measurements. Not only low-Z impurities but also high-Z impurities are reduced obviously after wall conditioning. The fraction of the total radiation loss to the ohmic input increases with increasing line-averaged central electron density. But it decreases with increasing the plasma current IP after wall conditionings. It is slightly lower for a boronized wall than that for a siliconized wall.
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