详细信息

Radiation losses in ohmically heated plasma in the HT-7 tokamak  ( EI收录)  

文献类型:期刊文献

中文题名:Radiation Losses in Ohmically Heated Plasma in the HT-7 Tokamak

英文题名:Radiation losses in ohmically heated plasma in the HT-7 tokamak

作者:Zhang, Xianmei[1,2]; Wan, Baonian[2]; Feng, Xiaojuan[1]

机构:[1] Department of Physics, East China University of Science and Technology, 200237 Shanghai, China; [2] Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031, China

年份:2004

卷号:6

期号:2

起止页码:2194

中文期刊名:Plasma Science and Technology

外文期刊名:Plasma Science and Technology

收录:EI(收录号:20063110039489);Scopus;CSCD:【CSCD2011_2012】;

基金:The project supported by the Meg-Science Engineering Project of the Chinese Academy of Sciences

语种:英文

中文关键词:impurities in plasma;radiationloss;tokamak

外文关键词:Boron - Carrier concentration - Electric discharges - Impurities - Plasmas - Silicon - Tokamak devices

摘要:Total radiation losses in ohmically heated plasma have been investigated in the HT-7 tokamak after different wall conditionings. Discharges after siliconization and boronization have been studied by using bolomitric measurements. Not only low-Z impurities but also high-Z impurities are reduced obviously after wall conditioning. The fraction of the total radiation loss to the ohmic input increases with increasing line-averaged central electron density. But it decreases with increasing the plasma current IP after wall conditionings. It is slightly lower for a boronized wall than that for a siliconized wall.
Total radiation losses in ohmically heated plasma have been investigated in the HT-7 tokamak after different wall conditionings. Discharges after siliconization and boronization have been studied by using bolomitric measurements. Not only low-Z impurities but also high-Z impurities are reduced obviously after wall conditioning. The fraction of the total radiation loss to the ohmic input increases with increasing line-averaged central electron density. But it decreases with increasing the plasma current IP after wall conditionings. It is slightly lower for a boronized wall than that for a siliconized wall.

参考文献:

正在载入数据...

版权所有©华东理工大学 重庆维普资讯有限公司 渝B2-20050021-7 
渝公网安备 50019002500408号 违法和不良信息举报中心