详细信息

Direct covalent modification of black phosphorus quantum dots with conjugated polymers for information storage  ( SCI-EXPANDED收录 EI收录)  

文献类型:期刊文献

英文题名:Direct covalent modification of black phosphorus quantum dots with conjugated polymers for information storage

作者:Cao, Yaming[1];Zhang, Bin[1];Tian, Xiangyu[1];Gu, Minchao[1];Chen, Yu[1]

机构:[1]East China Univ Sci & Technol, Inst Appl Chem, Sch Chem & Mol Engn, Key Lab Adv Mat, 130 Meilong Rd, Shanghai 200237, Peoples R China

年份:2019

卷号:11

期号:8

起止页码:3527

外文期刊名:NANOSCALE

收录:;EI(收录号:20190906573194);WOS:【SCI-EXPANDED(收录号:WOS:000459504400010)】;

基金:The authors are grateful for the financial support from the National Natural Science Foundation of China (51333002, 21404037), the Fundamental Research Funds for the Central Universities (WJ1514311), the Pujiang Program (16PJ1402400), and the Chenguang Program (15CG28).

语种:英文

外文关键词:Phosphorus - Aniline - Conjugated polymers - Digital devices - Nanocrystals

摘要:It has long been recognized that a small switching bias window, which is defined as the difference between the switch-on and switch-off voltages (Delta vertical bar V-ON - V-OFF vertical bar), and a high ON/OFF current ratio would be greatly favorable to reduce the power consumption of memory devices and to decrease the information misreading rate in digital memory devices. In contrast to two-dimensional BP nanosheets, zero dimensional BP quantum dots (BPQDs) show more exciting physical and chemical properties. By using newly synthesized poly[(9,9-dioctyl-9H-fluorene)-alt-(4-(9H-carbazol-9yl) aniline)] (PFCz-NH2) as the synthetic precursor, a highly soluble diazotated polymer, PFCz-N2+BF4-, was successfully synthesized and used to react with BPQDs under aqueous conditions to give the first conjugated polymer covalently functionalized BPQDs (PFCz-g-BPQDs). The as-prepared Al/PFCz-g-BPQDs/ITO device exhibits excellent nonvolatile rewritable memory performance, with a large ON/OFF current ratio (>10(7)) and low switch-on/off voltages (-0.89/+1.95 V). In contrast, the Al/PFCz-NH2 : BPQDs blend/ITO device also shows a rewritable memory effect, but its ON/OFF current ratio and Delta vertical bar V-ON - V-OFF vertical bar value are found to be 3 x 10(3) and 5.47 (Delta vertical bar+2.53-2.94 vertical bar), respectively. This work, which offers an easy one-step strategy for direct covalent functionalization of BPQDs, opens a way to explore more applications of BPQDs.

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