文献类型：期刊文献

英文题名：Plasma-induced damage and annealing repairing in ALD-Al2O3/PECVD-SiNx stacks

作者：Li, Shizheng[1];Yang, Ning[1];Yuan, Xiao[1];ye, Xiaojun[1];Wang, Liangxing[2];Zheng, Fei[3];Liu, Cui[1];Li, Hongbo[1]

机构：[1]East China Univ Sci & Technol, Sch Mat Sci & Engn, Shanghai 200237, Peoples R China;[2]ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China;[3]Shanghai Shenzhou New Energy Develepment Co Ltd, Shanghai 201112, Peoples R China

年份：2019

卷号：100

起止页码：214

外文期刊名：MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

收录：;EI(收录号：20192006923347);WOS:【SCI-EXPANDED(收录号:WOS:000470108600028)】；

基金：This work was supported by the Shanghai Municipal Project (17DZ1201102). The authors would like to thank the Hareon Solar for the Semilab SDI PV2000 system for COCOS measurement.

语种：英文

外文关键词：Silicon passivation; Atomic layer deposition; Al2O3; Interface defect density; Plasma-enhanced chemical vapor deposition; Solar cells

摘要：We study the effect of plasma-enhanced chemical vapor deposition (PECVD) SiNx process to atomic layer deposited (ALD) Al2O3 films on crystalline silicon surface passivation. The plasma-induced damage on Al2O3 films is affected by the methods of PECVD process (direct or microwave), and the states (as-deposited or annealed) and the thickness of ALD-Al2O3 films. The passivation degradation may be related to the doping of Si, N and H atoms into Al2O3 films during PECVD process, and is mainly manifested in the form of affecting interface defect density rather than negative fixed charge density. In particular, the annealed thick Al2O3 films with direct-PECVD SiNx process show more severe passivation degradation. Anyhow, to the great degree, the passivation quality can be repaired and further improved by post-annealing. Low temperature long time annealing can effectively increase the lifetime of the ALD-Al2O3/PECVD-SiNx stacks, while it cannot be simply replaced by a rapid high temperature firing. By post-annealing repairing, an absolute 0.13% increase in efficiency can be achieved for p-PERC solar cells.