文献类型：期刊文献

英文题名：Covalent Functionalization of Black Phosphorus with Conjugated Polymer for Information Storage

作者：Cao, Yaming[1];Tian, Xiangyu[1];Gu, Junwei[2];Liu, Bo[3,4];Zhang, Bin[1];Song, Sannian[4];Fan, Fei[1];Chen, Yu[1]

机构：[1]East China Univ Sci & Technol, Sch Chem & Mol Engn, Inst Appl Chem, Key Lab Adv Mat, 130 Meilong Rd, Shanghai 200237, Peoples R China;[2]Northwestern Polytech Univ, Dept Appl Chem, Sch Sci, Shaanxi Key Lab Macromol Sci & Technol, Xian 710072, Shaanxi, Peoples R China;[3]Suzhou Univ Sci & Technol, Sch Chem Biol & Mat Engn, 1 Kerui Rd, Suzhou 215009, Jiangsu, Peoples R China;[4]Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China

年份：2018

卷号：57

期号：17

起止页码：4543

外文期刊名：ANGEWANDTE CHEMIE-INTERNATIONAL EDITION

收录：;EI(收录号：20181304945004);WOS:【SCI-EXPANDED(收录号:WOS:000430165700014)】；

基金：The authors are grateful for the financial support of the National Natural Science Foundation of China (grant numbers 51333002, 21404037, 61378072, 51403126), and the Fundamental Research Funds for the Central Universities (grant number WJ1514311), the Pujiang Program (16PJ1402400) and the Chenguang Program (15CG28).

语种：英文

外文关键词：black phosphorus; covalent functionalization; polymer modifications; rewritable memory devices; syntheses

摘要：Major disadvantages of black phosphorus (BP) are its poor air-stability and poor solubility in common organic solvents. The best way to solve this problem is to incorporate BP into a polymer backbone or a polymer matrix to form novel functional materials that can provide both challenges and opportunities for new innovation in optoelectronic and photonic applications. As a proof-of concept application, we synthesized in situ the first highly soluble conjugated polymer-covalently functionalized BP derivative (PDDF-g-BP) which was used to fabricate a resistive random access memory (RRAM) device with a configuration of Au/PDDF-g-BP/ITO. In contrast to PDDF without memory effect, PDDF-g-BP-based device exhibits a nonvolatile rewritable memory performance, with a turn-on and turn-off voltages of +1.95 V and -2.34 V, and an ON/OFF current ratio of 10(4). The current through the device in both the ON and OFF states is still kept unchanged even at 200th switching cycle. The PDDF/BP blends show a very unstable memory performance with a very small ON/OFF current ratio.