文献类型：期刊文献

英文题名：Controllable synthesis of p-NiO/n-ZnO heterojunctions with preferred orientation of ZnO (100) and (110) planes for enhancing n-butanol sensing performance

作者：Cheng, Lingli[1];Cao, Yuyan[1];Li, Shen[1];Li, Xuan[1];Liu, Guohao[1];Cui, Shicong[3];Jiao, Zheng[2]

机构：[1]Shanghai Univ, Sch Environm & Chem Engn, Shanghai 200444, Peoples R China;[2]Shanghai Univ, Shanghai Appl Radiat Inst, Shanghai 201800, Peoples R China;[3]East China Univ Sci & Technol, Dept Chem, Shanghai 200237, Peoples R China

年份：2024

卷号：696

外文期刊名：COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS

收录：;EI(收录号：20242216172157);WOS:【SCI-EXPANDED(收录号:WOS:001246689600002)】；

基金：Lingli Cheng, Yuyan Cao and Shen Li contributed equally to the work. This work was supported by the Belt and Road Initiatives International Cooperation Project (No. 20640770300) and Shanghai Technical Service Center for Advanced Ceramics Structure Design and Precision Manufacturing (NO. 20DZ2294000) .

语种：英文

外文关键词：Gas sensor; NiO/ZnO composite; P-n heterojunction; Crystal planes; N-butanol

摘要：The low responsivity and poor selectivity of ZnO hinder its application in the field of gas sensors. Herein, p-NiO/ n-ZnO heterojunctions has been prepared by a simple hydrothermal method followed calcination, in which coneshaped monocrystalline ZnO nanorods are covered by ultrathin NiO nanosheets. And the NiO/ZnO-2 with 2.06% Ni atomic ratio exhibits a high response (Ra/Rg = 140) for 100 ppm n-butanol, and ultra -low detection limit as to 0.2 ppm n-butanol. In particular, the response range of NiO/ZnO-2 to n-butanol can cover 0.2 -200 ppm. Moreover, NiO/ZnO-2 also appears excellent selectivity and stability. It shows a 6 times higher response to nbutanol than ethanol under the same condition, as well as maintains more than 92% response to n-butanol for 15 days operation. The outstanding gas sensing performance of NiO/ZnO-2 can be attributed to the highly preferred orientation of ZnO (100) and (110) planes in NiO/ZnO-2 at first, which greatly optimizes the conductivity and defects on surface of NiO/ZnO-2. And NiO/ZnO-2 owns more oxygen vacancies on the surface than other samples, which contributes to increase the response sensitivity of gas sensors. Furthermore, the p -n heterojunction formed at the interface between NiO and ZnO play a key role in expand the depletion layer at the interfaces, increasing the amount of adsorbed oxygen, which conduces to heighten the response of NiO/ZnO-2. Our work enhances the gas sensing property of semiconductors by both regulating the orientation of planes and constructing p -n heterojunctions, which gives insight to design high performance gas sensors.