文献类型：期刊文献

中文题名：多晶硅化学气相沉积过程气相与表面反应模拟验证

英文题名：Numerical Validation of Gas and Surface Reactions for the Polysilicon Chemical Vapor Deposition Process

作者：倪昊尹[1];陈彩霞[1]

机构：[1]华东理工大学煤气化及能源化工教育部重点实验室,上海200237

年份：2015

卷号：44

期号：11

起止页码：3083

中文期刊名：人工晶体学报

外文期刊名：Journal of Synthetic Crystals

收录：CSTPCD;;EI(收录号：20155301741879);Scopus;北大核心:【北大核心2014】；CSCD:【CSCD2015_2016】；

语种：中文

中文关键词：多晶硅;化学气相沉积;数值模拟;反应机理

外文关键词：polysilicon;;chemical vapor deposition;;numerical simulation;;reaction mechanism

摘要：针对SiHCl_3-H_2体系下硅的化学气相沉积过程,采用边界层反应模型和Chemkin模拟软件,耦合不同气相与表面化学反应机理,对不同条件下硅的沉积速率,高温下HCl气体对硅表面的侵蚀速率进行了模拟计算。与文献报道的三组实验数据进行对比,验证现有反应机理的模拟精度,确定一套修正化学反应机理可以较为准确地预测工业级西门子多晶硅还原炉条件下多晶硅的沉积速率。
The growth rates of silicon,etch rates of silicon surface by HCl under high temperature in a Si HCl_3-H_2 chemical vapor deposition system were numerically simulated using reaction boundary layer model by CHEMKIN software. Different gas and surface reaction kinetics were validated using three sets of experimental data published in the literature. Comparing and fitting with the experimental data,a modified reaction model was proved to be suitable for predicting the growth rate of silicon under the condition of industrial Siemens chenmical vapor deposition process.