文献类型：期刊文献

英文题名：Tuning the thermal and insulation properties of bismuth borate glass for SiC power electronics packaging

作者：Chen, Junwei[1];Chen, Wei[2,3];Zhang, Liangzhu[1];Yan, Xuyang[2,3];Fan, Jiajie[2,3,5,6];Zeng, Huidan[1,4]

机构：[1]East China Univ Sci & Technol, Sch Mat Sci & Engn, Shanghai, Peoples R China;[2]Fudan Univ, Inst Future Lighting, Acad Engn & Technol, Shanghai Engn Technol Res Ctr SiC Power Device, Shanghai, Peoples R China;[3]Fudan Univ Ningbo, Res Inst, Ningbo, Peoples R China;[4]East China Univ Sci & Technol, Sch Mat Sci & Engn, Shanghai 200237, Peoples R China;[5]Fudan Univ, Inst Future Lighting, Acad Engn & Technol, Shanghai 200433, Peoples R China;[6]Fudan Univ, Shanghai Engn Technol Res Ctr SiC Power Device, Shanghai 200433, Peoples R China

年份：2024

卷号：107

期号：4

起止页码：2207

外文期刊名：JOURNAL OF THE AMERICAN CERAMIC SOCIETY

收录：;EI(收录号：20234915161830);WOS:【SCI-EXPANDED(收录号:WOS:001111811800001)】；

基金：This work was supported by the National Natural Science Foundation of China (grant numbers: NSFC 52272001 and 52072122).

语种：英文

外文关键词：bismuth borate glass; encapsulation; low melting point glass; power electronics packaging; SiC device

摘要：Silicon carbide (SiC) power devices are attracting significant attention due to their outstanding stability in high-voltage, high-temperature, and high-frequency environments. To replace toxic Pb-based glass, there is an urgent need to develop Pb-free glass for SiC power device encapsulation, considering its superior electrical insulation properties and processing capabilities. Here, we developed a Bi-based glass for effective encapsulation practical of SiC power devices. By increasing the content of glass modifier BaO, the structure of bismuth borate glass can be tuned to reduce glass network density, leading to the transition of structural units from [BO4] to [BO3]. The softened temperature is reduced to 363.4 degrees C with the BaO content increasing to 15 mol%. After encapsulating the SiC power devices using Bi-based glass, the glass demonstrated a reverse breakdown voltage of 650 V and an extremely low leakage current. Therefore, our work provided a route for adapting Pb-free-based low-melting glass for encapsulating SiC devices and offered potential for advanced semiconductor packaging. Glass encapsulation process flowchart for glass encapsulated SiC SBD.image