文献类型：期刊文献

英文题名：Sliding ferroelectric properties and strain effects in GeC/SiC van der Waals heterostructures

作者：Wu, Guangze[1]; Yan, Yabin[1,2]

机构：[1] Key Laboratory of Pressure Systems and Safety, The Ministry of Education, East China University of Science and Technology, Shanghai, 200237, China; [2] Shanghai Key Laboratory of Intelligent Sensing and Detection Technology, East China University of Science and Technology, Shanghai, 200237, China

年份：2025

卷号：3068

期号：1

外文期刊名：Journal of Physics: Conference Series

收录：EI(收录号：20253519091993)

语种：英文

外文关键词：Ferroelectric devices - Ferroelectric materials - Ferroelectricity - Heterojunctions - Induced polarization logging - Polarization - Silicon compounds - Van der Waals forces

摘要：Two-dimensional sliding ferroelectric materials have become a focal point of research in recent years due to their unique ferroelectric mechanisms. Expanding beyond single-layer systems, the development of two-dimensional heterostructures, known as heterostructure sliding ferroelectric materials, significantly broadens polarization modulation strategies and enhances overall functional performance. This work utilizes first-principles calculations to comprehensively explore the sliding ferroelectric properties of the GeC/SiC heterostructures. We explored the polarization reversal mechanism induced by interfacial sliding and examined the influence of strain on polarization behavior. Our findings indicate that polarization reversal occurs during the sliding process of the GeC/SiC heterostructures. Additionally, strain significantly modulates the polarization intensity: compressive strain reduces polarization, while tensile strain enhances it. These insights provide essential theoretical foundations and innovative design strategies for the development of novel two-dimensional ferroelectric materials and devices. ? Published under licence by IOP Publishing Ltd.