文献类型：会议论文

英文题名：Electro-Thermal-Stress Effects in GaN HEMTs for S-Band High-Power Microwave Applications

作者：Huang, Jingwen[1];Zhang, Yue[2];Zhou, Liang[1];Ma, Xinyu[1];Li, Mingxuan[1]

机构：[1]Shanghai Jiao Tong Univ, Key Lab Minist Educ Design & Elect Compatibil Hig, Shanghai, Peoples R China;[2]East China Univ Sci & Technol, Sch Informat Sci & Engn, Shanghai, Peoples R China

会议论文集：18th United Conference on Millemetre Waves and Terahertz Technologies-UCMMT

会议日期：AUG 25-28, 2025

会议地点：Nanjing, PEOPLES R CHINA

语种：英文

外文关键词：HPM; GaN HEMTs; Electro-thermal-stress

摘要：This study focuses on the multi-physics failure mechanisms of radio frequency front-end AlGaN/GaN high-electron-mobility transistors (HEMTs) under high-power microwave (HPM) exposure. Two S-band power amplifier (PA) modules were designed and fabricated using commercial GaN HEMT devices. An HPM injection experimental platform was developed to evaluate the failure threshold and characterize performance degradation. Numerical simulations, combined with experimental characterization, were employed to elucidate the underlying breakdown mechanisms. The results indicate that device failure is primarily driven by non-uniform heating in the channel region, with significant thermal accumulation occurring near the source side beneath the gate electrode. Additionally, thermal stress concentration at the field-plate edge contributes to passivation layer cracking, further accelerating device degradation.