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Effect of substrates and underlayer on CNT synthesis by plasma enhanced CVD    

文献类型:期刊文献

中文题名:Effect of substrates and underlayer on CNT synthesis by plasma enhanced CVD

英文题名:Effect of substrates and underlayer on CNT synthesis by plasma enhanced CVD

作者:Liang Xu Di Jiang Yi-Feng Fu Stephane Xavieras Shailendra Bansropun Afshin Ziaei Shan-Tung Tu Johan Liu

机构:[1]Division of Process Equipment Science and Engineering,School of Mechanical and Power Enigneering,East China University of Science and Technology;BioNano Systems Laboratory,Department of Microtechnology and Nanoscience(MC2),Chalmers University of Technology;SHT Smart High Tech AB;Thales Research and Technology;Key Laboratory of New Displays and System Integration,SMIT Center,and School of Mechatronics and Mechanical Engineering,Shanghai University

年份:2013

卷号:1

期号:3

起止页码:236

中文期刊名:先进制造进展:英文版

外文期刊名:Advances in Manrfacturing

基金:supported by EU programs “Nanotec”,“Mercure”,“Nanocom”,“Nano-RF” and “Nanotherm”, the SSF program“Scalable Nanomaterials and Solution Processable Thermoelectric Generators”, and also Contract No.EM11-0002;a part of the Sustainable Production Initiative and the Production Area of Advance at Chalmers;supported by the Shanghai Science and Technology Program(Grant No.12JC1403900) and NSFC(Grant No.51272153)

语种:英文

中文关键词:PECVD;CNT;等离子增强;等离子体增强化学气相沉积;合成;基底层;碳纳米管;生长技术

外文关键词:Carbon nanotube (CNT) - Substrate Underlayer Effect

摘要:Due to their unique thermal,electronic and mechanical properties,carbon nanotubes(CNTs) have aroused various attentions of many researchers.Among all the techniques to fabricate CNTs,plasma enhanced chemical vapor deposition(PECVD) has been extensively developed as one growth technique to produce vertically-aligned carbon nanotubes(VACNTs).Though CNTs show a trend to be integrated into nanoelectromechanical system(NEMS), CNT growth still remains a mysterious technology.This paper attempts to reveal the effects of substrates and underlayers to CNT synthesis.We tried five different substrates by substituting intrinsic Si with high resistivity ones and by increasing the thickness of SiO2 insulativity layer.And also, we demonstrated an innovative way of adjusting CNT density by changing the thickness of Cu underlayer.
Due to their unique thermal, electronic and mechanical properties, carbon nanotubes (CNTs) have aroused various attentions of many researchers. Among all the techniques to fabricate CNTs, plasma enhanced chemical vapor deposition (PECVD) has been extensively developed as one growth technique to produce verticallyaligned car bon nanotubes (VACNTs). Though CNTs show a trend to be integrated into nanoelectromechanical system (NEMS), CNT growth still remains a mysterious technology. This paper attempts to reveal the effects of substrates and un derlayers to CNT synthesis. We tried five different substrates by substituting intrinsic Si with high resistivity ones and byincreasing the thickness of SiO2 insulativity layer. And also, we demonstrated an innovative way of adjusting CNT den sity by changing the thickness of Cu underlayer.

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