文献类型：期刊文献

英文题名：Surface engineering of PbS quantum dot sensitized solar cells with a conversion efficiency exceeding 7%

作者：Jiao, Shuang[1];Wang, Jin[1];Shen, Qing[2,3];Li, Yan[1];Zhong, Xinhua[1]

机构：[1]E China Univ Sci & Technol, Inst Appl Chem, Key Lab Adv Mat, Shanghai 200237, Peoples R China;[2]Univ Electrocommun, Dept Engn Sci, 1-4-1 Chofugaoka, Chofu, Tokyo 1828585, Japan;[3]Japan Sci & Technol Agcy JST, 4-1-8 Honcho, Kawaguchi, Saitama 3320012, Japan

年份：2016

卷号：4

期号：19

起止页码：7214

外文期刊名：JOURNAL OF MATERIALS CHEMISTRY A

收录：;EI(收录号：20162202439060);WOS:【SCI-EXPANDED(收录号:WOS:000376035300016)】；

基金：This research is supported by the Natural Science Foundation of China (no. 21421004, 91433106, 21573249), and the Fundamental Research Funds for the Central Universities in China.

语种：英文

外文关键词：Cadmium sulfide solar cells - Cell engineering - Ion exchange - Surface defects - Cadmium sulfide - Conversion efficiency - IV-VI semiconductors - Titanium dioxide - Nanocrystals - Photosensitizers - II-VI semiconductors - Semiconductor quantum dots

摘要：The power conversion efficiencies (PCEs) of PbS quantum dot sensitized solar cells (QDSCs) reported are typically below 6%. This poor efficiency is mainly derived from the serious charge recombination in internal QDs and at the interface of QDs/TiO2/electrolyte. In this work, PbS/CdS QDs with a core/shell structure, which were used as the photosensitizer to fabricate sensitized solar cells, were prepared through the ion exchange method. With the reduced trapping state defects on the surface of the PbS QDs and resulting effective suppression of adverse charge recombination, the PbS/CdS QD-based cells have been improved remarkably in comparison with the pristine PbS-based QDSCs. By optimization of the thickness of the CdS shell, a PCE of 7.19% under one full sun illumination was obtained on the fabricated devices, which is among the best performances for liquid-junction PbS QDSCs.