文献类型：期刊文献

英文题名：Effect of Metal Oxide Deposition on the Sensitivity and Resolution of E-Beam Photoresist

作者：Dong, Xianguo[1,2];Shao, Yu'ang[3];Ping, Huihui[3];Tong, Xiaojing[3];Wu, Yue[3];Zhang, Yunfan[3];Wang, Mingxi[3];Zheng, Zhiyuan[3];Zhao, Jun[4];Wang, Jie[3];Guo, Zhiqian[1,2];Zhuang, Liwei[3];Xu, Yisheng[1,2,3]

机构：[1]Feringa Nobel Prize Scientist Joint Res Ctr, Inst Fine Chem, Sch Chem & Mol Engn, Key Lab Adv Mat, Shanghai 200237, Peoples R China;[2]Feringa Nobel Prize Scientist Joint Res Ctr, Inst Fine Chem, Sch Chem & Mol Engn, Joint Int Res Lab Precis Chem & Mol Engn, Shanghai 200237, Peoples R China;[3]East China Univ Sci & Technol, Sch Chem Engn, Key Lab Green Chem Engn & Ind Catalysis, State Key Lab Chem Engn, Shanghai 200237, Peoples R China;[4]Chinese Acad Sci, Shanghai Adv Res Inst, Shanghai 201210, Peoples R China

年份：2024

卷号：16

期号：41

起止页码：56019

外文期刊名：ACS APPLIED MATERIALS & INTERFACES

收录：;EI(收录号：20244117175881);WOS:【SCI-EXPANDED(收录号:WOS:001326684900001)】；

基金：This work was financially supported by the Shanghai Science and Technology Innovation Action Plan (22501100500), the National Natural Science Foundation of China (22078091), and Shanghai Pujiang Program (2022PJD016). The authors thank BL08U1B beamline of the Shanghai Synchrotron Radiation Facility for providing the beamtime.

语种：英文

外文关键词：PMMA-Al2O3; atomic layer deposition; sequential infiltration synthesis; electron beam photoresisit

摘要：Organic-inorganic hybrid resists offer a solution to the issue of low sensitivity in organic photoresists like poly(methyl methacrylate) (PMMA). In this study, an organic-inorganic hybrid resist (PMMA-Al2O3) with high sensitivity and resolution was prepared by depositing metal oxides into PMMA using sequential infiltration synthesis (SIS). PMMA-Al2O3 was prepared by precisely controlling the number of SIS cycles (<23) in various atomic layer deposition (ALD) processes to facilitate the growth of metal oxides within PMMA pores. The impact of different metal oxide contents and distributions on the sensitivity and resolution of electron beam exposure was investigated. Numerical simulations of the deposit formation within the PMMA pores were performed by solving the pore-scale ALD governing equations fed by the reactor-scale boundary conditions. The gradual pore constriction with SIS cycles was predicted and validated by the experimental charaterizations. The results demonstrated that PMMA-Al2O3 was prepared using 20 SIS cycles, which corresponds to the numerically predicted occurrence of the pore blockage at the upper region of the PMMA layer, exhibiting optimal electron beam (e-beam) resolution while enabling line exposure with a width of 50 nm. While the corresponding sensitivity was lower than those of the samples prepared using 5 and 10 SIS cycles, the degradation of the PMMA structure was affected under exposure. The pattern transfer results showed that the line width was well retained for 20 cycles of deposition because of the high etching resistance of Al2O3. This research is expected to provide an effective approach to developing next-generation high-performance photoresists.