文献类型：期刊文献

英文题名：p-n heterojunction constructed by γ-Fe2O3 covering CuO with CuFe2O4 interface for visible-light-driven photoelectrochemical water oxidation

作者：Liu, Yaqiao[1]; Hu, Shuozhen[1]; Zhang, Xinsheng[1]; Sun, Shigang[2]

机构：[1] State Key Laboratory of Chemical Engineering, School of Chemical Engineering, East China University of Science and Technology, Shanghai, 200237, China; [2] State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China

年份：2023

卷号：639

起止页码：464

外文期刊名：Journal of Colloid and Interface Science

收录：EI(收录号：20230913633192)

语种：英文

外文关键词：Charge transfer - Chemical stability - Corrosion protection - Corrosion resistance - Efficiency - Electric fields - Electrochemistry - Hematite - Heterojunctions - Oxygen vacancies - Solar power generation - Substrates

摘要：Fe2O3 is a promising n-type semiconductor as the photoanode of photoelectrochemical water-splitting method due to its abundance, low cost, environment-friendly, and high chemical stability. However, the recombination of photogenerated holes and electrons leads to low solar-to-hydrogen efficiency. In this work, to overcome the recombination issue, a p-type semiconductor, CuO, is introduced underneath the γ-Fe2O3 to synthesize γ-Fe2O3/CuO on the FTO substrate. Along with the formation of p-n heterojunction, CuFe2O4 is in situ generated at the interface of γ-Fe2O3 and CuO. The existence of Cu2O in CuO and CuFe2O4 promotes the charge transfer from CuO to γ-Fe2O3 and within CuFe2O4, respectively, resulting in creating an internal electric field in γ-Fe2O3/CuO and leading to the conduction band of CuO bending up and γ-Fe2O3 bending down. Additionally, Cu(II) in CuFe2O4 contributes to fast electron capture. Consequently, the charge transfer efficiency and charge separation efficiency of photo-generated holes are promoted. Hence, γ-Fe2O3/CuO exhibits an enhanced photocurrent density of 13.40 mA cm?2 (1.9 times higher than γ-Fe2O3). The photo corrosion resistance of CuO is dramatically increased with the protection of CuFe2O4, resulting in superior high chemical stability, i.e. 85% of the initial activity remains after a long-term test. ? 2023 Elsevier Inc.