详细信息
CsPbBr_(3) quantum dots photodetectors boosting carrier transport via molecular engineering strategy
文献类型:期刊文献
中文题名:CsPbBr_(3) quantum dots photodetectors boosting carrier transport via molecular engineering strategy
作者:Wei Yan[1];Jianhua Shen[1];Yihua Zhu[1];Yiqing Gong[1];Jingrun Zhu[1];Zheng Wen[2];Chunzhong Li[3]
机构:[1]Shanghai Engineering Research Centre of Hierarchical Nanomaterials,Key Laboratory for Ultrafine Materials of Ministry of Education,Frontiers Science Centre for Materiobiology and Dynamic Chemistry,School of Materials Science and Engineering,East China University of Science and Technology,Shanghai,200237,China;[2]Institute of Functional Nano and Soft Materials(FUNSOM),Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices,Soochow University,Suzhou,215123,China;[3]Shanghai Engineering Research Centre of Hierarchical Nanomaterials,School of Chemical Engineering,East China University of Science and Technology,Shanghai,200237,China
年份:2021
卷号:14
期号:11
起止页码:4038
中文期刊名:Nano Research
外文期刊名:纳米研究(英文版)
收录:CSTPCD;;Scopus;CSCD:【CSCD2021_2022】;PubMed;
基金:This work was supported by the National Natural Science Foundation of China(Nos.21676093,21776092,21978087,21838003,and 91834301);the Shanghai Scientific and Technological Innovation Project(Nos.19JC1410400 and 18JC1410600);Shanghai Rising-Star Program(No.18QA1401500);the Innovation Program of Shanghai Municipal Education Commission,Program for Professor of Special Appointment(Eastern Scholar)at Shanghai Institutes of High Learning,Shanghai Rising-Star Program(No.18QA1401500);the Fundamental Research Funds for the Central Universities(No.222201718002).
语种:英文
中文关键词:perovskite quantum dots;molecular engineering;photodetector;interface;3,4-ethylenedioxythiophene
摘要:Perovskite quantum dots (PQDs) require ligands on their surfaces to passivate defects and prevent aggregation. However, the ligands construct the interface relationship between the PQDs, which may seriously hinder the carrier transport. Hence, we propose a molecular engineering strategy of using 3,4-ethylenedioxythiophene (EDOT) to perfectly solve this problem, benefiting from its high conjugation and passivation ability to CsPbBr_(3) PQDs. Furthermore, EDOT on the surface of PQDs can be in-situ polymerized under the photocurrent of the photodetector, thus interconnecting the PQDs which enhanced the performance of the photodetectors up to 178% of its initial performance. We have thoroughly investigated the electropolymerization process of EDOT and its passivation effect on PQDs. The simple lateral photodetector based on EDOT PQDs exhibits a high responsivity of 11.96 A/W, which is 104 times higher than that of oleic acid caped PQDs. Due to the protection of poly(3,4-ethylenedioxythiophene) (PEDOT), the photodetector prepared from EDOT PQDs exhibited very high stability, retaining 94% of its performance after six months in air. This strategy provides a solution for the application of PQDs in high performances and stable optoelectronic devices.
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