详细信息
含端炔基聚碳硅氮烷的合成、耐热及陶瓷化性能
Synthesis,Thermal Properties and Ceramization Performance of Ethynylaniline-Terminated Polysilazane
文献类型:期刊文献
中文题名:含端炔基聚碳硅氮烷的合成、耐热及陶瓷化性能
英文题名:Synthesis,Thermal Properties and Ceramization Performance of Ethynylaniline-Terminated Polysilazane
作者:汪晨晨[1];宋宁[1];倪礼忠[1];鲍潮军[1]
机构:[1]华东理工大学材料科学与工程学院,特种功能高分子材料及相关技术教育部重点实验室,上海200237
年份:2015
卷号:41
期号:5
起止页码:593
中文期刊名:华东理工大学学报(自然科学版)
外文期刊名:Journal of East China University of Science and Technology
收录:CSTPCD;;Scopus;北大核心:【北大核心2014】;CSCD:【CSCD2015_2016】;
基金:国家自然科学基金(51073053)
语种:中文
中文关键词:含端炔基聚碳硅氮烷;固化;耐热性能;陶瓷化性能
外文关键词:ethynylaniline-terminated polysilazane;curing;thermal properties;ceramization performance
摘要:采用对苯二胺分别与甲基氢二氯硅烷(MeHSiCl2)或二甲基二氯硅烷(Me2SiCl2)胺解,以间氨基苯乙炔(APA)封端,制备含端炔基聚碳硅氮烷PCSN-A和PCSN-B。用FT-IR对其结构进行了表征,通过DSC研究了聚合物固化行为,采用TGA和XRD对其固化物的耐热性能和陶瓷化性能进行了研究。结果表明,PCSN-A由于结构内含有硅氢键(Si—H),Si—H键可参与固化,提高交联密度,其固化物具有优异于PCSN-B的耐热性能和陶瓷化性能,氮气下失重5%的温度(Td5)为564℃。氩气下1450℃裂解的陶瓷化率为78.4%,得到β-SiC,α-SiC和α-Si3N4陶瓷,聚碳硅氮烷可用作耐高温树脂基体和陶瓷前驱体。
Two kinds of polysilazane ceramic precursors(PCSN-A/PCSN-B)were synthesized by the ammonolysis reaction of dichloromethylsilane(MeSiHC12)/dimethyldichlorosilane(Me2SiC12)and p-phenylenediamine terminated by m-amino-phenylacetylene(APA).The structure of PCSN was characterized by FT-IR.Differential scanning calorimetry(DSC)was used to study the curing behavior.The thermal resistance and eeramization performance of the cured polymer were investigated by thermal gravity analysis(TGA)and XRD.The results showed that PCSN-A could be highly crosslinked at a low temperature through hydrosilylation reaction and Diels-Alder reaction due to the existence of Si--H bond.PCSN-A exhibited better thermal resistance and ceramization performance than PCSN-B.The temperature of 5%weight loss(Tds)Of PCSN-A was 564℃in nitrogen.After sintering at 1450℃in argon,PCSN-A thermoset turned into black inorganic ceramics composited ofβ-SiC,α-SiC andα-Si3N4 with a yield of 78.4%,indicating its potential to be used as high temperature resistant resin matrix and ceramic precursor.
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