文献类型：期刊文献

英文题名：Amorphous Transparent Cu(S,I) Thin Films with Very High Hole Conductivity

作者：Geng, Fangjuan[1,2,3];Wu, Yu-Ning[1,2];Splith, Daniel[4];Wang, Liangjun[1,2];Kang, Xiaowan[1,2];Chen, Xiaojian[1,2];Guo, Pengsheng[1,2];Liang, Shanshan[5];Yang, Lei[3];Lorenz, Michael[4];Grundmann, Marius[4];Zhu, Jiaqi[3];Yang, Chang[1,2]

机构：[1]East China Normal Univ, Shanghai Ctr Brain inspired Intelligent Mat & Devi, Key Lab Polar Mat & Devices MOE, Shanghai 200241, Peoples R China;[2]East China Normal Univ, Dept Elect, Shanghai 200241, Peoples R China;[3]Harbin Inst Technol, Ctr Composite Mat & Struct, Harbin 150001, Peoples R China;[4]Univ Leipzig, Felix Bloch Inst Festkorperphys, D-04103 Leipzig, Germany;[5]East China Univ Sci & Technol, Sch Phys, Shanghai 200237, Peoples R China

年份：2023

卷号：14

期号：26

起止页码：6163

外文期刊名：JOURNAL OF PHYSICAL CHEMISTRY LETTERS

收录：;EI(收录号：20232914412558);WOS:【SCI-EXPANDED(收录号:WOS:001018957200001)】；

基金：We thank Ulrike Teschner for the optical spectra measurements. This work was supported by the National Natural Science Foundation of China (Grant No. 52032004, No. 51625201 and No. 62074056), China Scholarship Council, and the Deutsche Forschungsgemeinschaft within the Research Group FOR 2857 "Copper Iodide as Multifunctional Semiconductor", projects P03 and P01.

语种：英文

外文关键词：Indium compounds - Tin oxides - Transparent electrodes

摘要：Amorphous transparent conductors (a-TCs) are key materialsforflexible and transparent electronics but still suffer from poor p-typeconductivity. By developing an amorphous Cu(S,I) material system,record high hole conductivities of 10(3)-10(4) S cm(-1) have been achieved in p-type a-TCs. Thesehigh conductivities are comparable with commercial n-type TCs madeof indium tin oxide and are 100 times greater than any previouslyreported p-type a-TCs. Responsible for the high hole conduction isthe overlap of large p-orbitals of I- and S2- anions, which provide a hole transport pathway insensitiveto structural disorder. In addition, the bandgap of amorphous Cu(S,I)can be modulated from 2.6 to 2.9 eV by increasing the iodine content.These unique properties demonstrate that the Cu(S,I) system holdsgreat potential as a promising p-type amorphous transparent electrodematerial for optoelectronics.