文献类型：期刊文献

中文题名：基于二维有机薄膜材料的忆阻器研究进展

英文题名：Research Progress on Memristors Based on Two-Dimensional Organic Thin Film Materials

作者：相明涵[1];张斌[1,2];轩福贞[2]

机构：[1]华东理工大学化学与分子工程学院,上海200237;[2]华东理工大学上海市智能感知与检测技术重点实验室,上海200237

年份：2025

卷号：38

期号：4

起止页码：279

中文期刊名：功能高分子学报

外文期刊名：Journal of Functional Polymers

收录：;北大核心:【北大核心2023】；

基金：国家自然科学基金(52321002,52473171)。

语种：中文

中文关键词：二维有机薄膜材料;忆阻器;非易失性存储;电阻切换机理;柔性电子器件

外文关键词：two-dimensional organic thin film;memristor;non-volatile storage;resistance switching mechanism;flexible electronics

摘要：忆阻器作为一种新型的电子元件,因具有存储与计算结合的潜力而受到广泛关注。二维有机薄膜(2D OTFs)材料具有原子级精确的层状结构、可调的电子特性和卓越的机械柔韧性,通过调控微观结构和表面化学特性,能够实现高效的电导率调控。近年来,基于2D OTFs的忆阻器因其超薄几何特性、优异的柔性和可调的电学性能,成为研究的热点。本文综述了2D OTFs在忆阻器中的应用研究进展,包括材料的可控制备方法、电阻切换机理及其在实际应用中的前景与挑战,并对未来的研究方向进行了展望。
Memristors,as emerging electronic components,have attracted extensive attention due to their potential to integrate storage and computation.Two-dimensional organic thin films(2D OTFs)possess atomic-level precise layered structures,tunable electronic properties,and excellent mechanical flexibility.These materials enable efficient electrical conductivity control through precise microstructural and surface chemical regulation.In recent years,memristors based on 2D OTFs have become a research hotspot,driven by their ultrathin geometry,superior flexibility,and tunable electrical performance.This review examines memristors based on 2D OTFs highlighting their preparation methods,resistance switching mechanisms,and application prospects.Four major preparation methods are discussed:solvothermal synthesis,interfacial polymerization,single-phase synthesis at room temperature,and electrochemical polymerization.Solvothermal synthesis forms crystalline 2D OTFs through high-temperature reactions in organic solvents.Interfacial polymerization enables controlled synthesis of 2D OTFs with adjustable thickness and dimensions.Single-phase synthesis of 2D OTFs at room temperature addresses challenges of precise thickness control and harsh conditions.Electrochemical polymerization produces uniform,porous films with tunable thickness and superior electrical properties.Resistance switching mechanisms in 2D OTFs memristors include ion migration,charge transfer,redox reactions,conformational changes,and multiple mechanisms.Ion migration involves redox reactions under an electric field,enabling reversible electron transfer and conductivity changes.Charge transfer relies on charge redistribution in donor-acceptor systems,facilitating electron transport and resistance switching.Redox-active units in 2D OTFs enable reversible redox processes,crucial for non-volatile memory.Conformational changes in polymer chains create efficient charge transport pathways,enhancing device performance.The multiple mechanisms utilize light-induced electron movement to generate changes in current or voltage,achieving controllable variations in resistance.The review also addresses challenges and future directions,such as improving material solubility,enhancing mechanical stability,and addressing stability issues in high-temperature and high-humidity environments.