文献类型：期刊文献

中文题名：低压ZnO压敏薄膜制备与研究

英文题名：Preparation and Characterization of Low Voltage ZnO Film Varistor

作者：陆慧[1];滕月莉[1];殷海波[1];陆元成[1];潘孝仁[1]

机构：[1]华东理工大学物理系,上海,200237 华东理工大学物理系,上海,200237 华东理工大学物理系,上海,200237 华东理工大学物理系,上海,200237 华东理工大学物理系,上海,200237

年份：2004

卷号：24

期号：Z1

起止页码：68

中文期刊名：真空科学与技术学报

外文期刊名：Chinese Journal of Vacuum Science and Technology

收录：CSTPCD;;EI(收录号：2005249160847);Scopus;北大核心:【北大核心2000】；CSCD:【CSCD_E2011_2012】；

语种：中文

中文关键词：ZnO低压压敏薄膜;结构;非线性系数;压敏电压

外文关键词：Annealing - Crystal orientation - Evaporation - Scanning electron microscopy - Thin films - Varistors - X ray diffraction

摘要：以GDARE法沉积的低压ZnO压敏薄膜为多孔性超微粒结构,沿c轴高度取向.经一定温度热处理后,薄膜具有较好的非线性V-I特性,漏电流小,压敏电压低.温度对薄膜的V-I特性影响较大.文章讨论了ZnO低压压敏薄膜的导电机理.
Low Voltage ZnO film varistor was deposited by gas discharge active reaction evaporation. XRD and SEM patterns show that the film with average size of crystal grains about 50 nm is highly c-axis oriented. The effect of annealing temperature on V-I characteristic of ZnO film was studied and conducting mechanism was also discussed.