文献类型：期刊文献

英文题名：Enhanced Mobility in C8-BTBT Field-Effect Transistors With Iodine-Doping

作者：Wang, Liangjun[1];Gao, Caifang[1,2];Ruan, Siyuan[1];Yang, Jialin[1];Liang, Shanshan[3];Yang, Chang[1];Li, Wenwu[1,2]

机构：[1]East China Normal Univ, Shanghai Ctr Brain Inspired Intelligent Mat & Devi, Sch Phys & Elect Sci, Key Lab Polar Mat & Devices MOE, Shanghai 200241, Peoples R China;[2]Fudan Univ, Inst Optoelect, Dept Mat Sci, Shanghai Frontiers Sci Res Base Intelligent Optoel, Shanghai 200433, Peoples R China;[3]East China Univ Sci & Technol, Sch Phys, Shanghai 200237, Peoples R China

年份：2024

卷号：45

期号：10

起止页码：1949

外文期刊名：IEEE ELECTRON DEVICE LETTERS

收录：;EI(收录号：20243817058331);WOS:【SCI-EXPANDED(收录号:WOS:001327759300087)】；

基金：This work was supported in part by the National Natural Science Foundation of China under Grant 62074056 and Grant 62374043, in part by the Fundamental Research Funds for the Central Universities, and in part by Shanghai Oriental Talent Program-Youth Project (2022)

语种：英文

外文关键词：Iodine; Doping; OFETs; Crystals; Performance evaluation; Organic semiconductors; X-ray diffraction; I-2 doping; C8-BTBT; organic thin-film transistors; mobility

摘要：Organic field-effect transistors (OFETs) are widely applied in the fields of flexible display and wearable devices. However, its mobility optimization is a major bottleneck. Here, enhanced mobility in organic dioctylbenzothienob en-zothiophene (C8-BTBT) OFETs is demonstrated with iodine doping. By optimizing the doping concentration, the carrier concentration at the metal/semiconductor interface markedly increases due to tunneling effects, generating a contact resistance (RC) C ) reduced by similar to 10(2) , and increasing mobility from 1.4 to 10.4 cm(2)V(-1)s(-1) . This work proposes an effective method to enhance the mobility of C8-BTBT OFETs.