文献类型：期刊文献

英文题名：High χ P2PFBEMA-b-P2VP Block Copolymers Forming 6-8 nm Domains for Semiconductor Lithography

作者：Wang, Mengge[1];Xue, Tao[1];Miao, Han[1];Wu, Wanqing[1];Zhang, Zhipeng[1];Han, Muzi[2];Liu, Xianhe[2];Li, Xinxin[1]

机构：[1]East China Univ Sci & Technol, Sch Mat Sci & Engn, Key Lab Specially Funct Polymer Mat & Related Tech, Minist Educ, Shanghai 200237, Peoples R China;[2]Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R China

年份：2024

卷号：16

期号：24

起止页码：31586

外文期刊名：ACS APPLIED MATERIALS & INTERFACES

收录：;EI(收录号：20242416229154);WOS:【SCI-EXPANDED(收录号:WOS:001242802200001)】；

基金：The authors are grateful for the financial support provided by the Fundamental Research Funds for the Central Universities (grant no. JKD01221701). Part of the experimental work has been carried out in Fudan Nanofabrication Laboratory. The authors thank the support from the National Integrated Circuit Innovation Center as well.

语种：英文

外文关键词：high chi block copolymer; directed self-assembly; fluorine-containing; orientation control; advancedlithography

摘要：We leveraged the potential of high chi-low N block copolymer (BCP), namely, poly[2-(perfluorobutyl) ethyl methacrylate]-block-poly(2-vinylpyridine) (P2PFBEMA-b-P2VP), and demonstrated its utility in next-generation nanomanufacturing. By combining molecular dynamics simulations with experiments, the chi value was calculated to be as high as 0.4 (at 150 degrees C), surpassing similar structures. Highly ordered features suitable for application were observed, ranging in periods from 19.0 nm down to 12.1 nm, with feature sizes as small as 6 nm. Transmission electron microscopy images of the BCP solutions indicated that preformed micelles in the solution facilitated the self-assembly process of the thin film. In addition, the vertical or parallel orientation of the cylindrical structure was determined by manipulating the solvent, substrate, and annealing conditions. Finally, guided by a wide topographical template, nearly defect-free directed self-assembly (DSA) lines with a resolution of 8 nm were achieved, highlighting its potential practical application in DSA lithography technology.