文献类型：期刊文献

英文题名：Resistive switching and artificial synapses performance of co-evaporated Cs3Cu2I5 films

作者：Zhang, Yi[1];Mao, Xiaojun[1];Chang, Xi[1];Xie, Jinghao[1];Niu, Yueping[1];Gong, Shangqing[1,2,3];Qian, Min[1]

机构：[1]East China Univ Sci & Technol, Sch Phys, Shanghai 200237, Peoples R China;[2]Shanghai Frontiers Sci Ctr Optogenet Tech Cell Met, Shanghai 200237, Peoples R China;[3]Shanghai Engn Res Ctr Hierarch Nanomat, Shanghai 200237, Peoples R China

年份：2024

卷号：125

期号：22

外文期刊名：APPLIED PHYSICS LETTERS

收录：;EI(收录号：20244817447216);WOS:【SCI-EXPANDED(收录号:WOS:001363255300008)】；

基金：This work was sponsored by the Project supported by the Space Application System of China Manned Space Program, the National Natural Science Foundation of China (Grant No. 61804054), the Program of Shanghai Academic Research Leader (Grant No. 21XD1400700), the Undergraduate Training Program on Innovation and Entrepreneurship (Grant No. S202410251192), and the Shanghai Frontiers Science Center of Optogenetic Techniques for Cell Metabolism (Shanghai Municipal Education Commission).

语种：英文

外文关键词：Conductive films - Enameling - Gallium compounds - Hard facing - Memristors - Resistive evaporation

摘要：Perovskite memristors have garnered significant interest for their potential simulating artificial synapses; however, the presence of the toxic lead-based perovskites has hindered advancements in this field. In this work, a nontoxic, thickness-controllable Cs3Cu2I5 perovskite functional layer is synthesized through a dual-source vapor deposition for the Ag/Cs3Cu2I5/ITO memristor. The co-evaporation method shows advantages of various element, controllable atomic ratio and thickness, free impurity, and continuously uniform film. This device demonstrates an operating voltage of 1.2 V, a low power consumption of 0.013 W, a retention time exceeding 10(4) s, and an endurance of over 400 cycles. The synaptic behavior is emulated using the memristor, focusing on phenomena such as short-term potentiation and depression, paired-pulse facilitation, and spike-time-dependent plasticity. The migration of Na+ and Cl- ions, which occurs between the synaptic cleft and the postsynaptic membrane in biological synapses, is analogously represented by the movement of Ag+ ions between functional layer and the bottom electrode of the memristor. This process is further analyzed using the Hodgkin-Huxley neuron model. The Cs3Cu2I5-based memristor shows considerable promise for applications in storage systems and artificial synapses.