详细信息
Preparation of Bio-Based Polybenzoxazine/Pyrogallol/Polyhedral Oligomeric Silsesquioxane Nanocomposites: Low Dielectric Constant and Low Curing Temperature ( SCI-EXPANDED收录 EI收录)
文献类型:期刊文献
英文题名:Preparation of Bio-Based Polybenzoxazine/Pyrogallol/Polyhedral Oligomeric Silsesquioxane Nanocomposites: Low Dielectric Constant and Low Curing Temperature
作者:Zhao, Yudi[1];Yuan, Manlin[1];Wang, Litong[1];Lu, Xin[1];Xin, Zhong[1]
机构:[1]East China Univ Sci & Technol, Sch Chem Engn, Dept Product Engn, Shanghai Key Lab Multiphase Mat Chem Engn, Shanghai 200237, Peoples R China
年份:2022
卷号:307
期号:3
外文期刊名:MACROMOLECULAR MATERIALS AND ENGINEERING
收录:;EI(收录号:20215011322780);WOS:【SCI-EXPANDED(收录号:WOS:000729033300001)】;
基金:This work was financially supported by National Natural Science Foundation of China (21776080), Innovation Program of Shanghai Municipal Education Commission (2019-01-07-00-02-E00061), and Shanghai Municipal Science and Technology Commission (21520761100).
语种:英文
外文关键词:bio-based benzoxazine; curing temperature; dielectric properties; nanocomposites; polyhedral oligomeric silsesquioxane
摘要:In this work, a bio-based benzoxazine monomer (C-s) is synthesized from cardanol, stearylamine, and paraformaldehyde through solvent-free method. Pyrogallol is used as a curing catalyst for the ring-opening polymerization of benzoxazine. Differential scanning calorimeter (DSC) results reveal that doping with pyrogallol reduces the exothermic peak temperature (T-p) of C-s from 256 to 174 degrees C. The polybenzoxazine/pyrogallol/polyhedral oligomeric silsesquioxane (PC-s/py/POSS) nanocomposites are prepared via thermal curing. The doping of aminopropyl isobutyl POSS (POSS-NH2) can reduce the dielectric constant of polybenzoxazine. The dielectric constant of PC-s/py/POSS is 2.64 at 1 MHz when the doping amount of POSS-NH2 is 10 wt%. The results of thermogravimetric analysis (TGA) and water absorption test indicate that the PC-s/py/POSS nanocomposites possess good thermal stability and water resistance. In summary, the PC-s/py/POSS nanocomposites with low curing temperature and low dielectric constant are expected to be applied to the low dielectric materials for microelectronic applications.
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