详细信息
Efficient quantum dot sensitized solar cells via improved loading amount management
文献类型:期刊文献
中文题名:Efficient quantum dot sensitized solar cells via improved loading amount management
作者:Wei Wang[1];Yiling Xie[1];Fangfang He[1];Yuan Wang[1];Weinan Xue[1];Yan Li[1]
机构:[1]Key Laboratory for Advanced Materials,Shanghai Key Laboratory of Functional Materials Chemistry,School of Chemistry and Molecular Engineering,East China University of Science and Technology,Shanghai,200237,China
年份:2023
卷号:8
期号:1
起止页码:213
中文期刊名:Green Energy & Environment
外文期刊名:绿色能源与环境(英文版)
收录:CSTPCD;;Scopus;CSCD:【CSCD2023_2024】;
基金:supported by the State Key Research Development Program of China(Grant 2016YFA0204200);the National Natural Science Foundation of China(Grant 21771063 and 21975075);the Fundamental Research Funds for the Central Universities in China(Grant 222201717003);the Fellowship of China Postdoctoral Science Foundation(No.2020M681207).
语种:英文
中文关键词:Quantum dot sensitized solar cell;Photoanode;Loading amount;Surfactant-assisted deposition
摘要:High light-harvesting efficiency and low interfacial charge transfer loss are essential for the fabrication of high-efficiency quantum dot-based solar cells(QDSCs). Increasing the thickness of mesoporous TiO2films can improve the loading of pre-synthesized QDs on the film and enhance the absorbance of photoanode, but commonly accompanied by the increase in the unfavorable charge recombination due to prolonged electron transmission paths. Herein, we systematically studied the influence of the balance between QD loading and TiO2film thickness on the performance of QDSCs. It is found that the relative thin photoanode prepared by the cationic surfactant-assisted multiple deposition procedure has achieved a high QD loading which is comparable to that of the thick photoanode commonly used. Under AM 1.5G illumination, Zn–Cu–In–Se and Zn–Cu–In–S based QDSCs with optimized 11.8 μm photoanodes show the PCE of 10.03% and 8.53%, respectively, which are comparable to the corresponding highest PCE of Zn–Cu–In–Se and Zn–Cu–In–S QDSCs(9.74% and 8.75%) with over 25.0 μm photoanodes. Similarly, an impressive PCE of 6.14% was obtained for the CdSe based QDSCs with a 4.1 μm photoanode, which is slightly lower than the best PCE(7.05%)of reference CdSe QDSCs with 18.1 μm photoanode.
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