文献类型：期刊文献

英文题名：Effect of Photo-Oxidation on Photobleaching of GeSe₂ and Ge₂Se₃ Films

作者：Yan, Qiqi[1,2];Jain, Himanshu[1];Ren, Jing[2];Zhao, Donghui[1];Chen, Guorong[2]

机构：[1]Lehigh Univ, Dept Mat Sci & Engn, Bethlehem, PA 18015 USA;[2]E China Univ Sci & Technol, Sch Mat Sci & Engn, Minist Educ, Key Lab Ultrafine Mat, Shanghai 200237, Peoples R China

年份：2011

卷号：115

期号：43

起止页码：21390

外文期刊名：JOURNAL OF PHYSICAL CHEMISTRY C

收录：;WOS:【SCI-EXPANDED(收录号:WOS:000296172800073)】；

基金：This study is supported by Shanghai Leading Academic Discipline Project (no. B502), Shanghai Key Laboratory Project (08DZ2230500), National Natural Science Foundation of China (NSFC 51072052), and the U.S. National Science Foundation for initiating and supporting our international collaboration through the International Materials Institute for New Functionality in Glass (grant no. DMR-0844014).

语种：英文

摘要：Photoinduced effects of GeSe2 and Ge2Se3 films illuminated in air and in vacuum are investigated by in situ transmission spectra measurements. Both compositions exhibit photobleaching (PB) when exposed to bandgap laser for a prolonged time in air. By comparing with the photoinduced effects in vacuum, we conclude that PB in Ge2Se3 film results from surface photo-oxidation, whereas intrinsic structural changes dominate the PB in GeSe2 film.