文献类型：期刊文献

英文题名：Numerical simulation of wet etching for R angle of fine metal mask

作者：Chen, Jiarui[1];Guo, Yahui[1];Guan, Jinbang[2];Wang, Fengjiao[2];Zong, Yuan[1];Zhao, Ling[1];Dai, Gance[1]

机构：[1]East China Univ Sci & Technol, Shanghai 200237, Peoples R China;[2]Zhejiang Zhongling Technol Co Ltd, Zhejiang 314499, Peoples R China

年份：2025

卷号：35

期号：6

外文期刊名：JOURNAL OF MICROMECHANICS AND MICROENGINEERING

收录：;EI(收录号：20252518645777);WOS:【SCI-EXPANDED(收录号:WOS:001507320100001)】；

基金：This research is supported by the Science and Technology Plan for Industrial and Agricultural Projects, ZheJiang, China (No. 2021004).

语种：英文

外文关键词：fine metal mask; wet etching; numerical simulation

摘要：Fine metal mask (FMM), serving as the patterning mask during the red-green-blue organic material deposition process, is essential for achieving ultra-high-definition and higher resolution OLED panel fabrication. The essence of the FMM fabrication process is the reactive flow. To match the mask shape with the desired final etched cavity opening, especially to improve etching differences at corners, this study has numerically investigated the FMM etching process based on the finite element method. The reliability of the model has been validated by comparing the simulation results with experimental data. The concentration and velocity distributions of the FeCl3 solution within the etching cavity have been analyzed, and the morphological changes of the etching cavity are investigated. The reason for the etching discrepancies between the R angle and the straight side has been elucidated. It reveals that the etching profile of the R angle is closely related to the mask structural parameters. Furthermore, the optimal R angle mask shape is determined using range analysis. The results contribute to the improvement of the etching accuracy at the R angle.