详细信息
Boosting Power Conversion Efficiencies of Quantum-Dot-Sensitized Solar Cells Beyond 8% by Recombination Control ( SCI-EXPANDED收录 EI收录)
文献类型:期刊文献
英文题名:Boosting Power Conversion Efficiencies of Quantum-Dot-Sensitized Solar Cells Beyond 8% by Recombination Control
作者:Zhao, Ke[1];Pan, Zhenxiao[1];Mora-Sero, Ivan[2];Canovas, Enrique[3];Wang, Hai[3,4];Song, Ya[1];Gong, Xueqing[1];Wang, Jin[1];Bonn, Mischa[3];Bisquert, Juan[2,5];Zhong, Xinhua[1]
机构:[1]E China Univ Sci & Technol, Sch Chem & Mol Engn, Key Lab Adv Mat, Shanghai 200237, Peoples R China;[2]Univ Jaume 1, Dept Fis, Optoelect Devices Grp, Photovolta, Castellon de La Plana 12071, Spain;[3]Max Planck Inst Polymer Res, D-55128 Mainz, Germany;[4]Johannes Gutenberg Univ Mainz, Grad Sch Mat Sci Mainz, D-55099 Mainz, Germany;[5]King Abdulaziz Univ, Dept Chem, Fac Sci, Jeddah 22254, Saudi Arabia
年份:2015
卷号:137
期号:16
起止页码:5602
外文期刊名:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
收录:;EI(收录号:20151900818313);WOS:【SCI-EXPANDED(收录号:WOS:000353931500056)】;
基金:We acknowledge the Natural Science Foundation of China (nos. 21421004, 91433106, 21175043), the Science and Technology Commission of Shanghai Municipality (nos. 11JC1403100, 12NM0504101), the Fundamental Research Funds for the Central Universities in China, and the Max Planck Society and Universitat Jaume I project 121361.01/1 for financial support. H.W. is a recipient of a fellowship of the Graduate School Materials Science in Mainz funded through the German Research Foundation in the Excellence Initiative (GSC 266).
语种:英文
外文关键词:II-VI semiconductors - Solar cells - Cadmium compounds - Conversion efficiency - Nanocrystals - Selenium compounds - Semiconductor quantum dots - Silicon compounds - Quantum efficiency - Titanium dioxide
摘要:At present, quantum-dot-sensitized solar cells (QDSCs) still exhibit moderate power conversion efficiency (with record efficiency of 6-7%), limited primarily by charge recombination. Therefore, suppressing recombination processes is a mandatory requirement to boost the performance of QDSCs. Herein, we demonstrate the ability of a novel sequential inorganic ZnS/SiO2, double layer treatment onto the QD-sensitized photoanode for strongly inhibiting interfacial recombination processes in QDSCs while providing improved cell stability. Theoretical modeling and impedance spectroscopy reveal that the combined ZnS/SiO2 treatment reduces interfacial recombination and increases charge collection efficiency when compared with conventional ZnS treatment alone. In line with those results, subpicosecond THz spectroscopy demonstrates that while QD to TiO2 electron-transfer rates and yields are insensitive to inorganic photoanode overcoating, back recombination at the oxide surface is strongly suppressed by subsequent inorganic treatments. By exploiting this approach, cdSe(x)Te(1-x), QDSCs exhibit a certified record efficiency of 8.21% (8.55% for a champion cell), an improvement of 20% over the previous record high efficiency of 6.8%, together with an additional beneficial effect of improved cell stability:
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