文献类型：期刊文献

英文题名：Conjugated polymer covalently modified graphene oxide quantum dots for ternary electronic memory devices

作者：Fan, Fei[1];Zhang, Bin[1];Cao, Yaming[1];Yang, Xutong[2];Gu, Junwei[2];Chen, Yu[1]

机构：[1]East China Univ Sci & Technol, Sch Chem & Mol Engn, Inst Appl Chem, Key Lab Adv Mat, 130 Meilong Rd, Shanghai 200237, Peoples R China;[2]Northwestern Polytech Univ, Sch Sci, Dept Appl Chem, Shaanxi Key Lab Macromol Sci & Technol, Xian 710072, Shaanxi, Peoples R China

年份：2017

卷号：9

期号：30

起止页码：10610

外文期刊名：NANOSCALE

收录：;EI(收录号：20173304041149);WOS:【SCI-EXPANDED(收录号:WOS:000406847800009)】；

基金：The authors are grateful for the financial support of the National Natural Science Foundation of China (51333002, 21404037, 21074034), and the Fundamental Research Funds for the Central Universities (WJ1514311), the Pujiang Program (16PJ1402400), and the Chenguang Program (15CG28).

语种：英文

外文关键词：Molecular orbitals - Conjugated polymers - Atomic force microscopy - Electron affinity - Nanocrystals - Graphene - Ionization potential - Tin oxides

摘要：Zero dimensional graphene oxide (GO) quantum dots (GOQDs) have been expected to play an important role in the development of new memory materials. When the size of GO was reduced to that of GOQDs, both the electron affinity and ionization potential of GO were found to be decreased, and this was followed by the elevation of lowest energy unoccupied molecular orbital (LUMO) energy level. This implies that the electron withdrawing ability of GOQDs is weaker than that of GO. In this work, a novel arylamine-based polyazomethine covalently functionalized graphene oxide quantum dots (TPAPAM-GOQDs), which was synthesized using an amidation reaction, was for the first time used to fabricate a ternary memory device with a configuration of gold/TPAPAM-GOQDs/indium tin oxide. The current ratio of OFF : ON-1 : ON-2 was found to be 1 : 60 : 3000. Its conductive nature was also revealed using an in situ conductive atomic force microscopy technique. This memory device could potentially increase the memory capacity of the device from the conventional 2(n) to 3(n) when compared to binary memory devices.