文献类型：期刊文献

英文题名：Highly enhanced luminescence of Tb3+-activated gadolinium oxysulfide phosphor by doping with Zn2+ ions

作者：Wang, Fei[1]; Yang, Bin[1]; Zhang, Jinchao[2]; Dai, Yongnian[1]; Ma, Wenhui[1]

机构：[1] The National Engineering Laboratory for Vacuum Metallurgy, Kunming University of Science and Technology, Kunming, 650093, China; [2] Inorganic Materials Department, East China University of Science and Technology, Shanghai, 200237, China

年份：2010

卷号：130

期号：3

起止页码：473

外文期刊名：Journal of Luminescence

收录：EI(收录号：20095212574669)

语种：英文

外文关键词：II-VI semiconductors - Phosphors - Precipitation (chemical) - Solid state reactions - X ray diffraction - Zinc oxide - Energy transfer - Ions - Luminescence - Luminance - Crystal structure - Emission spectroscopy

摘要：Gd2O2S:Tb phosphor were synthesized by co-precipitation method combined with solid-state reactions. The brightness of terbium-activated gadolinium oxysulfide phosphors were enhanced and size distributions were controlled by doping the phosphor with a specific amount of zinc oxide. By the analysis of X-ray diffractions, the excitation spectrum and emission spectrum, it can be confirmed that no new phase was introduced and lattice size was diminished. In this way, it may ease access to energy transfer between Gd3+ ions and Tb3+ ions as well as Tb3+ ions and Tb3+ ions. Therefore, self-sensitizations of Tb3+ ions can be enhanced, 5D4-7FJ transitions were further improved and 5D3-7FJ transitions were lowered. The enhancement of luminescent properties including brightness and chroma purity were also confirmed due to incorporations of Zn2+ ions. ? 2009 Elsevier B.V. All rights reserved.