文献类型：期刊文献

英文题名：Orbital-Selectivity-Induced Robust Quantum Anomalous Hall Effect in Hund's Metals MgFeP

作者：Yao, Qingzhao[1,2,3,4];Xue, Yang[5];Zhao, Bao[6];Zhu, Ye[1,2,3,4];Li, Zhijian[1,2,3,4];Yang, Zhongqin[1,2,3,4]

机构：[1]Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China;[2]Fudan Univ, Key Lab Computat Phys Sci MOE, Shanghai 200433, Peoples R China;[3]Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China;[4]Shanghai Qi Zhi Inst, Shanghai 200030, Peoples R China;[5]East China Univ Sci & Technol, Sch Phys, Shanghai 200237, Peoples R China;[6]Liaocheng Univ, Sch Phys Sci & Informat Technol, Liaocheng 252059, Peoples R China

年份：2024

卷号：24

期号：5

起止页码：1563

外文期刊名：NANO LETTERS

收录：;EI(收录号：20240715554978);WOS:【SCI-EXPANDED(收录号:WOS:001158793700001)】；

基金：This work was supported by the National Natural Science Foundation of China under Grant Nos. 12174059, 11874117, 11904101, and 11604134 and Natural Science Foundation of Shanghai under Grant No. 21ZR1408200. The calculations were performed at the High Performance Computational Center (HPCC) of the Department of Physics at Fudan University.

语种：英文

外文关键词：quantum anomalous Hall effect; Hund's metal; orbital selectivity; high temperature ferromagnetism; correlation enhanced spin-orbit coupling

摘要：Ferromagnetic (FM) states with high Curie temperatures (T-c) and strong spin-orbit coupling (SOC) are indispensable for the long-sought room-temperature quantum anomalous Hall (QAH) effects. Here, we propose a two-dimensional (2D) iron-based monolayer MgFeP that exhibits a notably high FM T-c (about 1525 K) along with exceptional structural stabilities. The unique multiorbital nature in MgFeP, where localized d(x2-y2) and d(xz/yz) orbitals coexist with itinerant d(xy) and d(z)(2) orbitals, renders the monolayer a Hund's metal and in an orbital-selective Mott phase (OSMP). This OSMP triggers an FM double exchange mechanism, rationalizing the high T-c in the Hund's metal. This material transitions to a QAH insulator upon consideration of the SOC effect. By leveraging orbital selectivity, the QAH band gap can be enlarged by more than two times (to 137 meV). Our findings showcase Hund's metals as a promising material platform for realizing high-performance quantum topological electronic devices.