文献类型：期刊文献

英文题名：Epitaxial halide perovskite-based materials for photoelectric energy conversion

作者：Zhou, Ziren[1];Qiao, Hong Wei[1];Hou, Yu[1];Yang, Hua Gui[1];Yang, Shuang[1]

机构：[1]East China Univ Sci & Technol, Key Lab Ultrafine Mat, Minist Educ, Sch Mat Sci & Engn,Shanghai Engn Res Ctr Hierarch, Shanghai 200237, Peoples R China

年份：2021

卷号：14

期号：1

起止页码：127

外文期刊名：ENERGY & ENVIRONMENTAL SCIENCE

收录：;EI(收录号：20210709906827);WOS:【SCI-EXPANDED(收录号:WOS:000611850000005)】；

基金：This work was financially supported by National Natural Science Fund for Distinguished Young Scholars (51725201), National Natural Science Fund for Excellent Young Scholars (52022030), National Ten Thousand Talent Program for Young Top-notch Talent, National Natural Science Foundation of China (51972111, 51902185), International (Regional) Cooperation and Exchange Projects of the National Natural Science Foundation of China (51920105003), Innovation Program of Shanghai Municipal Education Commission (E00014), the Fundamental Research Funds for the Central Universities (JKD012016025, JKD012016022), and Shanghai Engineering Research Center of Hierarchical Nanomaterials (18DZ2252400). The authors also thank the Frontiers Science Center for Materiobiology and Dynamic Chemistry.

语种：英文

外文关键词：Photoelectricity - Semiconductor device manufacture - Energy conversion - Metal halides - Epitaxial growth - Growth kinetics

摘要：Metal halide perovskites (MHP) are an emerging class of semiconducting materials with superior optoelectronic properties, which have achieved notable success in photoelectric device applications. As a classical technique in the semiconductor industry, epitaxy has indeed advanced the perovskite technology in the recent years by enabling the material combinations with a coherent interfacial lattice as well as combined complementary functionalities, which are not available in the single-phase constituents. In this review, we start with the basic principles and chemical techniques for the epitaxial growth of MHP-based materials. We summarize the epitaxial structures of perovskite solids, which are categorized by the combined materials and compare their performance in photoelectric devices including solar cells, photodetectors, and light-emitting diodes (LEDs). The impact of lattice strain and band structure at the substrate/perovskite interface, which can affect the energy conversion process, are then discussed after the epitaxial cases. We finally outline the future directions for perovskite epitaxy, targeting the in situ monitoring of the surface atomic kinetics during the growth, precise interfacial structure characterization, and the upscaling fabrications, which might further benefit the performance and application of perovskite-based devices.