文献类型：期刊文献

英文题名：Two-Dimensional Porous Sandwich-Like C/Si-Graphene-Si/C Nanosheets for Superior Lithium Storage

作者：Yao, Weiqi[1];Chen, Jie[1];Zhan, Liang[1,2];Wang, Yanli[1];Yang, Shubin[3]

机构：[1]East China Univ Sci & Technol, Key Lab Specially Funct Polymers & Related Techno, Shanghai Key Lab Multiphase Mat Chem Engn, State Key Lab Chem Engn,Minist Educ, Shanghai 200237, Peoples R China;[2]Chinese Acad Sci, Inst Coal Chem, CAS Key Lab Carbon Mat, Taiyuan 030001, Shanxi, Peoples R China;[3]Beihang Univ, Sch Mat Sci & Engn, Minist Educ, Key Lab Aerosp Adv Mat & Performance, Beijing 100191, Peoples R China

年份：2017

卷号：9

期号：45

起止页码：39371

外文期刊名：ACS APPLIED MATERIALS & INTERFACES

收录：;EI(收录号：20174704449009);WOS:【SCI-EXPANDED(收录号:WOS:000416203800027)】；

基金：This work was financially supported by the National Science Foundation of China (51472086, 51572007, 51622203, and 51002051), Recruitment Program of Global Experts and the Fundamental Research Funds for the Central Universities (YWF-16-BJ-Y-12), and CAS Key Laboratory of Carbon Materials (KLCMKFJJ1703).

语种：英文

外文关键词：silicon; graphene; anode material; lithium-ion batteries; sandwich-like structure

摘要：A novel two-dimensional porous sandwich-like Si/carbon nanosheet is designed and successfully fabricated as an anode for superior lithium storage, where a porous Si nanofilm grows on the two sides of reduced graphene oxide (rGO) and is then coated with a carbon layer (denoted as C/Si-rGO-Si/C). The coexistence of micropores and mesopores in C/Si-rGO-Si/C nanosheets offers a rapid Li+ diffusion rate, and the porous Si provides a short pathway for electric transportation. Meanwhile, the coated carbon layer not only can promote to form a stable SEI layer, but also can improve the electric conductivity of nanoscale Si coupled with rGO. Thus, the unique nanostructures offer the resultant C/Si-rGO-Si/C electrode with high reversible capacity (1187 mA h g(-1) after 200 cycles at 0.2 A g(-1)), excellent cycle stability (894 mA h g(-1) after 1000 cycles at 1 A g(-1)), and high rate capability (694 mA h g(-1) at 5 A g(-1), 447 mA h g(-1) at 10 A g(-1)).