文献类型：期刊文献

英文题名：Tunable Schottky contact in the graphene/WSe2(1-x)O2x heterostructure by asymmetric O doping

作者：Zhang, Rui[1];Hao, Guoqiang[1];Ye, Xiaojun[1];Zhang, Wenjing[1];Li, Hongbo[1]

机构：[1]East China Univ Sci & Technol, Sch Mat Sci & Engn, Shanghai 200237, Peoples R China

年份：2021

卷号：129

期号：17

外文期刊名：JOURNAL OF APPLIED PHYSICS

收录：;EI(收录号：20211910322994);WOS:【SCI-EXPANDED(收录号:WOS:000646352900003)】；

基金：This work was supported by the East China University of Science and Technology (No. 200237) and the Institute of Electrical Engineering, Chinese Academy of Science (No. 100190). This work was financed by the Science and Technology Commission of Shanghai Municipality, China (Grant No. 17DZ1201405).

语种：英文

外文关键词：Graphene transistors - Electronic properties - Ohmic contacts - Calculations - Van der Waals forces - Field effect transistors - Graphene

摘要：Tuning the electrical transport properties of a nanoelectronic device with a p-type Schottky contact remains a grand challenge. To solve this issue, we explore the effectiveness of asymmetric O doping on performance improvements of the graphene/WSe2(1-x)O2x (Gr/WSe2(1-x)O2x) heterostructure using first-principles calculations. The results show that graphene and the WSe2(1-x)O2x monolayer could form a stable van der Walls interface. Further, the controlled asymmetric O doping at different positions and concentrations regulates the electronic properties of the Gr/WSe2(1-x)O2x heterostructure in terms of the type and the height of the Schottky barrier. It is found that a transformation of a Schottky contact from an n-type to p-type is realized by changing the position of the O dopant from inside to outside, and a high Schottky barrier height of 0.72 eV in the undoped Gr/WSe2 heterostructure can be reduced to 0.06 and 0.09 eV for the O doing inside and outside the interface, respectively. In addition, when the O doping concentration increases to 67% both inside and outside of the interface, the Ohmic contacts are observed. Last, the controllable Schottky contact in the Gr/WSe2(1-x)O2x heterostructure is induced by the charge redistribution of the interface, which is caused by the shift of the Fermi level. This work may provide a promising method to improve the electronic performance of the Gr/WSe2 nano field effect transistors.