文献类型：期刊文献

英文题名：Constructing Deep Traps to Achieve Excellent Dielectric Properties in Crystal-Based HfO2/PEI Nanocomposite Films with Ultralow Filler Loadings

作者：Lin, Jingyu[1];Jiang, Junhao[1];Zhou, Yukang[1];Fan, Qianqian[2];Zhuang, Qixin[1];Mi, Puke[1];Yin, Wei[1];Zuo, Peiyuan[1]

机构：[1]East China Univ Sci & Technol, Sch Mat Sci & Engn, Key Lab Adv Polymer Mat Shanghai, Shanghai 200237, Peoples R China;[2]Shanghai Aerosp Control Technol Inst, Shanghai 201109, Peoples R China

年份：2024

卷号：16

期号：9

起止页码：11880

外文期刊名：ACS APPLIED MATERIALS & INTERFACES

收录：;EI(收录号：20240915656489);WOS:【SCI-EXPANDED(收录号:WOS:001177406500001)】；

基金：All authors are grateful for financial support from the National Natural Science Foundation of China (52073091, 52373073, 52303083, and 22171086), the Shanghai Pujiang Program (22PJ1402500), and the Key Laboratory of Advanced Polymer Materials of Shanghai.

语种：英文

外文关键词：hybrid dielectrics; monoclinic Hafnium dioxide; ultralow filler loadings; energy storage densities; poly(ether imide); high-temperature resistance

摘要：Mixing fillers featured with wide band gaps in polymers can effectively meet the requirement of higher energy storage densities. However, the fundamental relationship between the crystal structures of fillers and the dielectric properties of the corresponding nanocomposites is still unclear. Accordingly, we introduced ultralow contents of the synthesized cubic Hafnium dioxide (c-HfO2) or monoclinic Hafnium dioxide (m-HfO2) as deep traps into poly(ether imide) (PEI) to explore their effects on dielectric properties and the charge-blocking mechanism. m-HfO2/PEI showed better charge trapping due to the higher electron affinity and deeper trap energy. At room temperature, the 0.4 vol % m-HfO2/PEI maintains an ultralow dielectric loss of 0.008 while obtaining a dielectric constant twice that of pure PEI at 1 kHz, simultaneously outperforming in terms of leakage current density, breakdown strength (452 kV mm-1), discharge energy density (U d, 5.03 J cm-3), charge-discharge efficiency (eta, 92%), and dielectric thermal stability. At 125(degrees)C, it exhibits a considerable U d of 2.48 J cm(-3 )and a high eta of 85% at 300 kV mm(-1), surpassing the properties of pure PEI. This promising work opens up a new path for studying HfO2-derived dielectrics with unique crystal structures.