文献类型：期刊文献

英文题名：The mechanism of the nano-CeO2 films deposition by electrochemistry method as coated conductor buffer layers

作者：Lu, Yuming[1,2];Cai, Shuang[1,2];Liang, Ying[3];Bai, Chuanyi[1,2];Liu, Zhiyong[1,2];Guo, Yanqun[1,2];Cai, Chuanbing[1,2]

机构：[1]Shanghai Univ, Dept Phys, Shanghai 200444, Peoples R China;[2]Shanghai Key Lab High Temp Supercond, Shanghai 200444, Peoples R China;[3]E China Univ Sci & Technol, Sch Sci, Inst Nucl Technol & Applicat, Shanghai 200237, Peoples R China

年份：2015

卷号：512

起止页码：1

外文期刊名：PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS

收录：;EI(收录号：20151000618897);WOS:【SCI-EXPANDED(收录号:WOS:000352226600001)】；

基金：This work is partly sponsored by the Science and Technology Commission of Shanghai Municipality (14DZ2260700, 13PJ1401800, 13111102300 and 11dz1100302), the National Natural Science Foundation of China (11174193 and 51202141), and the Ministry of Science and Technology of China (973 Projects, 2011CBA00105).

语种：英文

外文关键词：Electrochemistry; CeO2; Buffer; Coated conductor

摘要：Comparing with conventional physical vapor deposition methods, electrochemistry deposition technique shows a crack suppression effect by which the thickness of CeO2 films on Ni-5 at.% W substrate can reach a high value up to 200 nm without any cracks, make it a potential single buffer layer for coated conductor. In the present work, the processes of CeO2 film deposited by electrochemistry method are detailed investigated. A hydroxide reactive mechanism and an oxide reactive mechanism are distinguished for dimethyl sulfoxide and aqueous solution, respectively. Before heat treatment to achieve the required bi- axial texture performance of buffer layers, the precursor CeO2 films are identified in nanometer scales. The crack suppression for electrochemistry deposited CeO2 films is believed to be attributed to the nano-effects of the precursors. (C) 2015 Elsevier B.V. All rights reserved.