文献类型：期刊文献

英文题名：POSS and PAG Dual-Containing Chemically Amplified Photoresists by RAFT Polymerization for Enhanced Thermal Performance and Acid Diffusion Inhibition

作者：Yu, Haimeng[1];Liu, Shaoshuai[1];Fu, Haiyan[1];Cui, Zepeng[1];Zhang, Liangshun[1];Tian, Jia[1]

机构：[1]East China Univ Sci & Technol, Sch Mat Sci & Engn, Shanghai Key Lab Adv Polymer Mat, Shanghai 200237, Peoples R China

年份：2024

卷号：14

期号：17

外文期刊名：APPLIED SCIENCES-BASEL

收录：;EI(收录号：20243817041835);WOS:【SCI-EXPANDED(收录号:WOS:001310896800001)】；

语种：英文

外文关键词：DUV photoresists; RDRP; photoacid generators; POSS

摘要：A random copolymer (PTBM), utilized as deep ultra-violet (DUV) photoresist, was prepared by reversible addition-fragmentation chain transfer (RAFT) polymerization with tert-butyl methacrylate (tBMA), methyl methacrylate (MMA), triphenylsulfonium p-styrenesulfonate (TPS-SS), and functional poly (sesquicarbonylsiloxanes) (POSS-MA) as the monomer components, and 4-cyano-4-[(dodecylsulfanylthiocarbonyl) sulfanyl]pentanoic acid (CDSPA) as the RAFT reagent. Fourier transform infrared spectroscopy (FT-IR) and proton nuclear magnetic resonance (1H NMR) proved successful synthesis. Ultraviolet absorption spectroscopy (UV) analysis verified the transparency of the polymer in the DUV band. RAFT polymerization kinetics showed that the polymerization rate conformed to the first-order kinetic relationship, and the polymerization process exhibited a typical controlled free radical polymerization behavior. Thermogravimetric analysis (TGA), differential scanning calorimetry (DSC) and static thermo-mechanical analysis (TMA) showed that the incorporation of POSS groups improved the thermal properties of the copolymer. According to scanning electron microscopy (SEM) images, the copolymerization of photoacid monomers (TPS-SS) resulted in photoresist copolymers exhibiting good resistance to acid diffusion and low roughness.