详细信息
High Electron Affinity Enables Fast Hole Extraction for Efficient Flexible Inverted Perovskite Solar Cells ( SCI-EXPANDED收录 EI收录)
文献类型:期刊文献
英文题名:High Electron Affinity Enables Fast Hole Extraction for Efficient Flexible Inverted Perovskite Solar Cells
作者:Ru, Pengbin[1];Bi, Enbing[1,3];Zhang, Yao[1];Wang, Yanbo[1];Kong, Weiyu[1];Sha, Yongming[1];Tang, Wentao[1];Zhang, Peng[1,2];Wu, Yongzhen[4,5];Chen, Wei[6];Yang, Xudong[1,2];Chen, Han[1,2];Han, Liyuan[1,2]
机构:[1]Shanghai Jiao Tong Univ, State Key Lab Met Matrix Composites, Sch Mat Sci & Engn, 800 Dong Chuan Rd, Shanghai 200240, Peoples R China;[2]Shanghai Jiao Tong Univ, Joint Res Ctr Clean Energy Mat, 800 Dong Chuan Rd, Shanghai 200240, Peoples R China;[3]Shanghai Liyuan New Energy Technol Co Ltd, 1599 Fengpu Ave, Shanghai 201400, Peoples R China;[4]East China Univ Sci & Technol, Sch Chem & Mol Engn, Key Lab Adv Mat, Shanghai 200237, Peoples R China;[5]East China Univ Sci & Technol, Sch Chem & Mol Engn, Inst Fine Chem, Shanghai 200237, Peoples R China;[6]Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Luoyu Rd 1037, Wuhan 430074, Peoples R China
年份:2020
卷号:10
期号:12
外文期刊名:ADVANCED ENERGY MATERIALS
收录:;EI(收录号:20200608129598);WOS:【SCI-EXPANDED(收录号:WOS:000510185100001)】;
基金:This work was supported by National Key Research and Development Program of China (grant no. 2018YFB1500104), the Natural Science Foundation of Shanghai (17ZR1414800), the National Natural Science Foundation of China (grant nos. 11574199, 11674219, and 11834011), the Program for National Postdoctoral Program for Innovative Talents and the National Postdoctoral Foundation of China (2018M640388), the Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning. The authors thank the Instrumental Analysis Center of SJTU and Advanced Electronic Materials and Devices (AEMD) of SJTU for measurements.
语种:英文
外文关键词:hole transport materials; low-temperature processed; perovskite solar cells
摘要:Inverted perovskite solar cells (PSCs) with low-temperature processed hole transporting materials (HTMs) suffer from poor performance due to the inferior hole-extraction capability at the HTM/perovskite interfaces. Here, molecules with controlled electron affinity enable a HTM with conductivity improved by more than ten times and a decreased energy gap between the Fermi level and the valence band from 0.60 to 0.24 eV, leading to the enhancement of hole-extraction capacity by five times. As a result, the 3,6-difluoro-2,5,7,7,8,8-hexacyanoquinodimethane molecules are used for the first time enhancing open-circuit voltage (V-oc) and fill factor (FF) of the PSCs, which enable rigid-and flexible-based inverted perovskite devices achieving highest power conversion efficiencies of 22.13% and 20.01%, respectively. This new method significantly enhances the V-oc and FF of the PSCs, which can be widely combined with HTMs based on not only NiOx but also PTAA, PEDOTT:PSS, and CuSCN, providing a new way of realizing efficient inverted PSCs.
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