文献类型：期刊文献

英文题名：Furan-Containing Quinoidal Compounds for High-Performance Copper/Silver Electrode-Based n-Channel Organic Transistors

作者：Feng, Yan[1,2];Li, Hongxiang[1]

机构：[1]East China Univ Sci & Technol, Inst Fine Chem, Sch Chem & Mol Engn,Frontiers Sci Ctr Mat & Dynam, Key Lab Adv Mat,Feringa Nobel Prize Scientist Joi, Shanghai 200237, Peoples R China;[2]Shanghai Normal Univ, Key Lab Resource Chem Minist Educ, Shanghai Key Lab Rare Earth Funct Mat, Shanghai 200234, Peoples R China

年份：2022

卷号：5

期号：1

起止页码：132

外文期刊名：ACS APPLIED ELECTRONIC MATERIALS

收录：;WOS:【SCI-EXPANDED(收录号:WOS:001441369800001)】；

基金：This work was supported by the National Natural Science Foundation of China (grants 21875279, 21790362, 22075080, and 52273176).

语种：英文

外文关键词：interface optimization; self-doping layer; organic semiconductors; charge transfer complex; n-channel organic transistors; quinoidal compound; copper and silver electrodes

摘要：Furan-containing quinoidal compounds FTzTzF-C10 and FTzTzF-C8 were synthesized. These compounds have low lowest unoccupied molecular orbital (LUMO) energy levels and can form a charge transfer complex with Ag and Cu films, proved by cyclic voltammograms and Raman spectra. Single crystal diffraction results reveal that they adopt a lamellar layer structure with strong pi-pi interactions in crystals. Thin film transistor characterization shows that FTzTzF-C10 and FTzTzF-C8 exhibit n-channel behavior with an electron mobility of 1.18 cm(2) V-1 s(-1), one of the highest electron mobilities reported for thin film devices based on furan-containing semiconductors. Notably, the performance of FTzTzF-C10 and FTzTzF-C8 devices is nearly independent of the metals (Au, Cu, and Ag) of source-drain electrodes, which is ascribed to the ultrathin charge transfer layer formed by the spontaneous reaction of FTzTzFs and electrodes (Ag, Cu). These results demonstrate that furan is an excellent block for quinoidal semiconductors and promote the development of Cu/Ag electrode-based organic transistors.