文献类型：期刊文献

英文题名：Exciton dynamics and photoresponse of a CVD-grown WS2/thermally evaporated CsSnBr3 heterostructure

作者：Mu, Haichuan[1];Tang, Jingjian[1];Wang, Ruibin[2];Qian, Min[1];Guo, Qi[1]

机构：[1]East China Univ Sci & Technol, Sch Phys, 130 Meilong Rd, Shanghai 200237, Peoples R China;[2]Shanghai Jiao Tong Univ, Instrumental Anal Ctr, 800 Dongchuan Rd, Shanghai 200240, Peoples R China

年份：2023

卷号：11

期号：30

起止页码：10310

外文期刊名：JOURNAL OF MATERIALS CHEMISTRY C

收录：;EI(收录号：20233014435721);WOS:【SCI-EXPANDED(收录号:WOS:001023085200001)】；

基金：The research is supported by National Science Foundation of China (NSFC11974366). The author thanks Juan Liu, Research Center of Analysis and Test of East China University of Science and Technology for the support on the SEM analysis, and Ms Limin Sun, Ms Xue Ding and Ms Nannan Zhang in The Instrumental Analysis Center of Shanghai Jiao Tong University for the discussion about the XPS data reduction.

语种：英文

外文关键词：Bromine compounds - Cesium compounds - Chemical vapor deposition - Chlorine compounds - Excitons - Lead compounds - Metal halides - Monolayers - Niobium compounds - Perovskite - Photodetectors - Photons - Silicon - Silicon compounds - Tin compounds - Transition metals

摘要：Transition metal dichalcogenide (TMDC)/metal halide perovskite photodetectors provide a promising new route for the realization of high-performance photodetectors owing to their unique optoelectronic features. However, previous studies mostly focused on vertically stacked TMDC/perovskite heterostructures and only on relatively thick perovskites (over 100 nm), whereby a large imbalance between the thicknesses of the perovskite and TMDC monolayer exists, which hinders further exploration of interface interactions from a possible coupling between the two components. Moreover, normally toxic Pb-based, not benign Sn-based, ones are widely reported. In this study, chemical vapor deposition (CVD)-grown WS2/thermally evaporated CsSnBr3 photodetectors with a planar structure were fabricated and their photoresponse, as well as their photophysical properties and morphology and structure characteristics, were investigated. A robust WS2 triangular domain with an edge length around 120 & mu;m was generated on Si/SiO(2)via tuning the CVD process whereby an apparent selective deposition of CsSnBr3 with a preferential (200) orientation on WS2 could be achieved. A superior photoresponse compared to the isolated monolayer WS2 and CsSnBr3 films was demonstrated, which could be ascribed to the facilitation of the separation of the photogenerated electron-hole pairs due to the formation of a type-II band alignment at the WS2/CsSnBr3 junction. Exciton dynamics analysis confirmed such carriers were transferring across the interface, especially an excessive receipt of holes in the monolayer WS2. The thickness of CsSnBr3 had a critical influence on the photoresponse, whereby 50 nm CsSnBr3 realized the optimal balance between the light absorbance and built-in potential effect. Our study provides a simple way to obtain TMDC/Sn-based metal halide perovskite photodetectors.