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Boric Acid Mediated Formation and Doping of NiOx Layers for Perovskite Solar Cells with Efficiency over 21%  ( SCI-EXPANDED收录 EI收录)  

文献类型:期刊文献

英文题名:Boric Acid Mediated Formation and Doping of NiOx Layers for Perovskite Solar Cells with Efficiency over 21%

作者:Ge, Bing[1];Lin, Ze Qing[1];Zhou, Zi Ren[1];Qiao, Hong Wei[1];Chen, Ai Ping[1];Hou, Yu[1];Yang, Shuang[1];Yang, Hua Gui[1]

机构:[1]East China Univ Sci & Technol, Sch Mat Sci & Engn, Shanghai Engn Res Ctr Hierarch Nanomat, Key Lab Ultrafine Mat,Minist Educ, Shanghai 200237, Peoples R China

年份:2021

卷号:5

期号:4

外文期刊名:SOLAR RRL

收录:;EI(收录号:20211010027375);WOS:【SCI-EXPANDED(收录号:WOS:000625159500001)】;

基金:This work was financially supported by National Natural Science Fund for Excellent Young Scholars (grant no. 52022030), National Ten Thousand Talent Program for Young Top-notch Talent, National Natural Science Fund for Distinguished Young Scholars (grant no. 51725201), National Natural Science Foundation of China (grant nos. 51972111 and 51902185), International (Regional) Cooperation and Exchange Projects of the National Natural Science Foundation of China (grant no. 51920105003), Innovation Program of Shanghai Municipal Education Commission (grant no. E00014), the Fundamental Research Funds for the Central Universities (JKD012016025, JKD012016022), and Shanghai Engineering Research Center of Hierarchical Nanomaterials (grant no. 18DZ2252400). The authors also thank the Frontiers Science Center for Materiobiology and Dynamic Chemistry.

语种:英文

外文关键词:boric acid; efficiency; hole transport layers; nickel oxide; perovskite solar cells

摘要:Metal halide perovskite solar cells (PSCs) have emerged as one of the most promising photovoltaic technologies. For inverted planar PSCs, nickel oxide (NiOx) layers, as inorganic p-type semiconductors, are competitive hole transport layers (HTLs) because of their low cost, chemical stability, and easy preparation. However, their inferior device performance still lags behind the devices using organic HTLs. Herein, a boric acid-assisted strategy for NiOx HTLs is reported that enables compact film deposition and electronic modulation. Boron doping can enhance conductivity and deepen the valence band edge, leading to efficient hole extraction and transport. A methylammonium lead iodide (MAPbI(3)) photovoltaic device based on our strategy achieves an optimized efficiency of 21.40% with a high open voltage of 1.131 V and a high fill factor of 80.9% with negligible hysteresis, as well as excellent stability.

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