文献类型：期刊文献

英文题名：Driving-in effect and gettering degradation induced by laser doping using borosilicate glass as dopant source

作者：Yang, Ning[1];Li, Shizheng[1];Yuan, Xiao[1];Ye, Xiaojun[1];Sang, Xuegang[2];Liu, Cui[1];Li, Hongbo[1]

机构：[1]East China Univ Sci & Technol, Sch Mat Sci & Engn, Shanghai 200237, Peoples R China;[2]Suntech Power Co Ltd, Shanghai 201114, Peoples R China

年份：2019

卷号：30

期号：7

起止页码：6895

外文期刊名：JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

收录：;EI(收录号：20191006605314);WOS:【SCI-EXPANDED(收录号:WOS:000467435300068)】；

基金：This work was supported by the Shanghai Science and Technology Committee Project (18DZ1205007).

语种：英文

外文关键词：Borosilicate glass - Carrier lifetime - Boron - Amorphous silicon

摘要：In the present work, driving-in effect with a low surface doping concentration and a deep junction after laser irradiation is illustrated by using borosilicate glass formed in the boron spin-on dopant diffusion process as dopant source. PC1D simulation results based on the experimental boron doping profiles demonstrate that the doping modification realized by laser irradiation can achieving an efficiency improvement of 0.13% at most. Meanwhile, no amorphoussilicon and rare holes are observed after laser irradiation, indicating a relative low laser damage. Root mean square roughness is introduced to characterize the laser damage, whose variation trend with the laser frequency is opposite to that of effective minority carrier lifetime. Besides, unique gettering degradation effect by taking iron concentration as standard is observed, which is attributed to there-dissolution and re-segregation process during laser irradiation. The present work will be helpful to deepen the understanding of laser boron doping as well as reduce the laser damage and relative high boron concentration induced by laser doping.